Designs of Silicon Nitride Slot Waveguide Modulators with Electro-Optic Polymer and the Effect of Induced Charges in Si-Substrate on Their Performance
Designs of Silicon Nitride Slot Waveguide Modulators with Electro-Optic Polymer and the Effect of Induced Charges in Si-Substrate on Their Performance
Dimensional parameters are optimized comparing stoichiometric and Si-rich silicon nitride-based push-pull modulators using a slot waveguide structure, electro-optic polymer cladding, and in-plane ground-signal-ground electrode. An optical power confinement in slot spacing is examined for choosing the optimal device parameters for wavelength of 1550nm. The electrical simulations are set to calculate an asymmetric spatial distribution of poling efficiency and modulating refractive index change in polymer. The influence of carrier charge in Si-substrate is also considered. The voltage-length products as well as the poling efficiency of Si-rich SiN are calculated as 1.47 V·cm and 0.74 respectively for a polymer with a γ_(33,bulk) of 100 pm/V. For the selected polymer the calculated efficiency comparable to standard silicon based plasma dispersion depletion modulators. The efficiency can be increased more than two times for demonstrated polymers with a γ_(33,bulk) of ~230. Low metal absorption loss of ~ 1dB/cm can be achieved from the optimal designed device. Comparing to the conventional simulation method without Si-substrate effect, a more accurate simulation method is also presented in this work.
Electro-optical devices, SiN waveguide, EO-polymer modulator, Slot waveguide modulator, Si-substrate
1-15
Rutirawut, Teerapat
590101f7-65c8-4da3-9a5d-e3d2efd74349
Talataisong, Wanvisa
7901320c-7d2e-488a-b47f-c93de4245234
Gardes, Frederic
7a49fc6d-dade-4099-b016-c60737cb5bb2
15 February 2021
Rutirawut, Teerapat
590101f7-65c8-4da3-9a5d-e3d2efd74349
Talataisong, Wanvisa
7901320c-7d2e-488a-b47f-c93de4245234
Gardes, Frederic
7a49fc6d-dade-4099-b016-c60737cb5bb2
Rutirawut, Teerapat, Talataisong, Wanvisa and Gardes, Frederic
(2021)
Designs of Silicon Nitride Slot Waveguide Modulators with Electro-Optic Polymer and the Effect of Induced Charges in Si-Substrate on Their Performance.
IEEE Photonics Journal, 13 (2), , [6600715].
(doi:10.1109/JPHOT.2021.3059276).
Abstract
Dimensional parameters are optimized comparing stoichiometric and Si-rich silicon nitride-based push-pull modulators using a slot waveguide structure, electro-optic polymer cladding, and in-plane ground-signal-ground electrode. An optical power confinement in slot spacing is examined for choosing the optimal device parameters for wavelength of 1550nm. The electrical simulations are set to calculate an asymmetric spatial distribution of poling efficiency and modulating refractive index change in polymer. The influence of carrier charge in Si-substrate is also considered. The voltage-length products as well as the poling efficiency of Si-rich SiN are calculated as 1.47 V·cm and 0.74 respectively for a polymer with a γ_(33,bulk) of 100 pm/V. For the selected polymer the calculated efficiency comparable to standard silicon based plasma dispersion depletion modulators. The efficiency can be increased more than two times for demonstrated polymers with a γ_(33,bulk) of ~230. Low metal absorption loss of ~ 1dB/cm can be achieved from the optimal designed device. Comparing to the conventional simulation method without Si-substrate effect, a more accurate simulation method is also presented in this work.
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Designs of SiN Slot Waveguide Modulator_Revised_T_Rutirawut
- Accepted Manuscript
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09354568
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Published date: 15 February 2021
Additional Information:
Funding Information:
Manuscript received January 20, 2021; revised February 4, 2021; accepted February 9, 2021. Date of publication February 15, 2021; date of current version March 8, 2021. This work was supported by the Engineering and Physical Sciences Research Council (EPSRC, EP/K02423X/1), Project “COSMICC” H2020 programme under Grant agreement n°688516 and Project “Plasmoniac” H2020 programme under Grant agreement n°871391. The work of Teerapat Rutirawut was supported by the Development and Promotion of Science and Technology Talents Project (Royal Thai Government scholarship). Corresponding author: Teerapat Rutirawut (e-mail: t.rutirawut@soton.ac.uk).
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© 2009-2012 IEEE.
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Copyright 2021 Elsevier B.V., All rights reserved.
Keywords:
Electro-optical devices, SiN waveguide, EO-polymer modulator, Slot waveguide modulator, Si-substrate
Identifiers
Local EPrints ID: 448444
URI: http://eprints.soton.ac.uk/id/eprint/448444
ISSN: 1943-0655
PURE UUID: 49b4f3a2-3281-41cc-a144-299d435f6174
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Date deposited: 22 Apr 2021 16:45
Last modified: 17 Mar 2024 03:26
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Author:
Teerapat Rutirawut
Author:
Wanvisa Talataisong
Author:
Frederic Gardes
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