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High-speed silicon photonics modulators for the 2 μm wavelength

High-speed silicon photonics modulators for the 2 μm wavelength
High-speed silicon photonics modulators for the 2 μm wavelength
The 2 µm communication windows has established itself amongst other solutions to address the capacity crunch. The 2 µm window offers three benefits: predicted ultra low loss windows of hollow-core fibres, optical amplification gain windows of thulium doped amplifier and compatibility with the silicon photonics silicon-oninsulator platform. We demonstrate state of the art high-speed modulators based on a 220 nm siliconon-insulator platform operating at a wavelength of 1950 nm using the free carrier plasma dispersion effect in silicon. The Mach-Zehnder interferometer carrierdepletion modulator has a modulation efficiency (Vπ·Lπ) of 2.89 V·cm at 4 V reverse bias. The insertion loss is 5.25 dB. It operates at a data rate of 25 Gbit/s OOK with an extinction ratio of 6.25 dB. We have also demonstrated a streamlined dual drive PAM4 generation method, producing 25 Gbit/s PAM4 signal using the same device. A Michelson interferometer is demonstrated with a Vπ·Lπ of 1.36 V·cm. It has almost double the efficiency of an equivalent MZM. It reaches a data rate of 20 Gbit/s. A broadband MZM was developed and its performance has been characterized at both 1550 nm and 1950 nm wavelengths. At 1950 nm, the carrier-depletion modulator operates at a data rate of 20 Gbit/s with an extinction ratio of 5.8 dB and insertion loss of 13 dB. The modulation efficiency (Vπ·Lπ) is 2.68 V·cm at 4 V reverse bias. At 1550 nm, an open eye is obtained at 30 Gbit/s. The difference in bandwidth is caused by the bandwidth limit of the 2 µm measurement setup. This work is a proof of principle demonstration, significantly improving previously published results and filling the long pending gap for the 2 µm silicon modulators. It paves a route towards a fully silicon-based transceiver in the 2 µm window.
University of Southampton
Cao, Wei
5202fa2b-a471-45d4-84e9-9104dffdbbfc
Cao, Wei
5202fa2b-a471-45d4-84e9-9104dffdbbfc
Mashanovich, Goran
c806e262-af80-4836-b96f-319425060051

Cao, Wei (2020) High-speed silicon photonics modulators for the 2 μm wavelength. Doctoral Thesis, 139pp.

Record type: Thesis (Doctoral)

Abstract

The 2 µm communication windows has established itself amongst other solutions to address the capacity crunch. The 2 µm window offers three benefits: predicted ultra low loss windows of hollow-core fibres, optical amplification gain windows of thulium doped amplifier and compatibility with the silicon photonics silicon-oninsulator platform. We demonstrate state of the art high-speed modulators based on a 220 nm siliconon-insulator platform operating at a wavelength of 1950 nm using the free carrier plasma dispersion effect in silicon. The Mach-Zehnder interferometer carrierdepletion modulator has a modulation efficiency (Vπ·Lπ) of 2.89 V·cm at 4 V reverse bias. The insertion loss is 5.25 dB. It operates at a data rate of 25 Gbit/s OOK with an extinction ratio of 6.25 dB. We have also demonstrated a streamlined dual drive PAM4 generation method, producing 25 Gbit/s PAM4 signal using the same device. A Michelson interferometer is demonstrated with a Vπ·Lπ of 1.36 V·cm. It has almost double the efficiency of an equivalent MZM. It reaches a data rate of 20 Gbit/s. A broadband MZM was developed and its performance has been characterized at both 1550 nm and 1950 nm wavelengths. At 1950 nm, the carrier-depletion modulator operates at a data rate of 20 Gbit/s with an extinction ratio of 5.8 dB and insertion loss of 13 dB. The modulation efficiency (Vπ·Lπ) is 2.68 V·cm at 4 V reverse bias. At 1550 nm, an open eye is obtained at 30 Gbit/s. The difference in bandwidth is caused by the bandwidth limit of the 2 µm measurement setup. This work is a proof of principle demonstration, significantly improving previously published results and filling the long pending gap for the 2 µm silicon modulators. It paves a route towards a fully silicon-based transceiver in the 2 µm window.

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More information

Published date: June 2020

Identifiers

Local EPrints ID: 448511
URI: http://eprints.soton.ac.uk/id/eprint/448511
PURE UUID: 4264babd-3fa2-431c-b2df-52c989a94336
ORCID for Wei Cao: ORCID iD orcid.org/0000-0003-1431-7060
ORCID for Goran Mashanovich: ORCID iD orcid.org/0000-0003-2954-5138

Catalogue record

Date deposited: 23 Apr 2021 16:34
Last modified: 29 Oct 2024 02:45

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Contributors

Author: Wei Cao ORCID iD
Thesis advisor: Goran Mashanovich ORCID iD

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