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Transformation of digital to analog switching in TaOx-based memristor device for neuromorphic applications

Transformation of digital to analog switching in TaOx-based memristor device for neuromorphic applications
Transformation of digital to analog switching in TaOx-based memristor device for neuromorphic applications
An oxidizable metal diffusion barrier inserted between the active metal electrode and the switching layer decreases the electroforming voltage and enhances the switching stability and synaptic performances in TaOx-based conducting bridge memristor devices. The TiW barrier layer avoids an excessive metal ion diffusion into the switching layer, while the TiWOx interfacial layer is formed between the barrier and the switching layer. It modulates the oxygen vacancy distribution at the top interface and contributes to the formation and rupture of the metal ion-oxygen vacancy hybrid conducting bridge. We observe that the device that relies upon non-hybrid (metal ions only) conducting bridge suffers from poor analogous performance. Meanwhile, the device made with the barrier layer is capable of providing 2-bit memory and robust 50 stable epochs. TaOx also acts as resistance for suppressing and a thermal enhancement layer, which helps to minimize overshooting current. The enhanced analog device with high linear weight update shows multilevel cell characteristics and stable 50 epochs. To validate the neuromorphic characteristic of the devices, a simulated neural network of 100 synapses is used to recognize 10 × 10 pixel images.
0003-6951
Saleem, Aftab
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Simanjuntak, Firman
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Chandrasekaran, Sridhar
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Rajasekaran, Sailesh
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Tseng, Tseung-Yuen
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Prodromakis, Themis
d58c9c10-9d25-4d22-b155-06c8437acfbf
Saleem, Aftab
c737b1df-e78a-44ce-bece-19cd6cf48262
Simanjuntak, Firman
a5b8dd07-002c-4520-9f67-2dc20d2ff0d5
Chandrasekaran, Sridhar
1f8ad24e-4264-4f42-a55d-ce948d662dee
Rajasekaran, Sailesh
48e88c5b-1b15-4dda-b633-97d40f0d54bd
Tseng, Tseung-Yuen
0dab5c1d-e0ca-44c0-b160-5e70a3afb560
Prodromakis, Themis
d58c9c10-9d25-4d22-b155-06c8437acfbf

Saleem, Aftab, Simanjuntak, Firman, Chandrasekaran, Sridhar, Rajasekaran, Sailesh, Tseng, Tseung-Yuen and Prodromakis, Themis (2021) Transformation of digital to analog switching in TaOx-based memristor device for neuromorphic applications. Applied Physics Letters, 118 (11), [1121031]. (doi:10.1063/5.0041808).

Record type: Article

Abstract

An oxidizable metal diffusion barrier inserted between the active metal electrode and the switching layer decreases the electroforming voltage and enhances the switching stability and synaptic performances in TaOx-based conducting bridge memristor devices. The TiW barrier layer avoids an excessive metal ion diffusion into the switching layer, while the TiWOx interfacial layer is formed between the barrier and the switching layer. It modulates the oxygen vacancy distribution at the top interface and contributes to the formation and rupture of the metal ion-oxygen vacancy hybrid conducting bridge. We observe that the device that relies upon non-hybrid (metal ions only) conducting bridge suffers from poor analogous performance. Meanwhile, the device made with the barrier layer is capable of providing 2-bit memory and robust 50 stable epochs. TaOx also acts as resistance for suppressing and a thermal enhancement layer, which helps to minimize overshooting current. The enhanced analog device with high linear weight update shows multilevel cell characteristics and stable 50 epochs. To validate the neuromorphic characteristic of the devices, a simulated neural network of 100 synapses is used to recognize 10 × 10 pixel images.

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Transformation of digital to analog switching in TaOx-based memristor device for neuromorphic applications - Accepted Manuscript
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Accepted/In Press date: 26 February 2021
e-pub ahead of print date: 16 March 2021
Additional Information: Funding Information: This work was supported by the Ministry of Science and Technology, Taiwan, under Project No. MOST 109-2221-E-009-034-MY3 and the NCTU visiting research fellowship program. F. M. Simanjuntak and T. Prodromakis acknowledge the support of the EPSRC Programme Grant (No. EP/R024642/1) and the H2020-FETPROACT-2018-01 SYNCH project. Publisher Copyright: © 2021 Author(s). Copyright: Copyright 2021 Elsevier B.V., All rights reserved.

Identifiers

Local EPrints ID: 448810
URI: http://eprints.soton.ac.uk/id/eprint/448810
ISSN: 0003-6951
PURE UUID: 19f23f47-ec80-43c0-a131-4f61781eb2a9
ORCID for Themis Prodromakis: ORCID iD orcid.org/0000-0002-6267-6909

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Date deposited: 06 May 2021 16:31
Last modified: 07 Sep 2021 01:45

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Contributors

Author: Aftab Saleem
Author: Firman Simanjuntak
Author: Sridhar Chandrasekaran
Author: Sailesh Rajasekaran
Author: Tseung-Yuen Tseng
Author: Themis Prodromakis ORCID iD

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