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Direct observation of surface charge redistribution in active nanoscale conducting channels by Kelvin Probe Force Microscopy

Direct observation of surface charge redistribution in active nanoscale conducting channels by Kelvin Probe Force Microscopy
Direct observation of surface charge redistribution in active nanoscale conducting channels by Kelvin Probe Force Microscopy
Surface-exposed uniformly doped Silicon-on-Insulator (SOI) channels are fabricated to evaluate the accuracy of Kelvin Probe Force Microscopy (KPFM) measured surface potential and reveals the role of surface charge on the exposed channel operated in the ambient environment. First, the quality of the potential profile probed in the vacuum environment is assessed by the consistency of converted resistivity from KPFM result to the resistivity extracted by the other three methods. Second, in contrast to the simulated and vacuum surface potential profile and image, the ambient surface potential is bent excessively at the terminals of the channel. The excessive bending can be explained by the movement of surface charge under the drive of geometry induced strong local electric field from the channel and results in non-uniform distribution. The dynamic movement of surface charges is proved by the observation of time-dependent potential drift in the ambient measurement. The result suggests the surface charge effect should be taken into account of the measurement of the surface potential in the ambient environment and the design of charge sensitive devices whose surfaces are exposed to air or in ambient conditions in their operation.
0957-4484
Ye, Sheng
3cdaba62-b2e3-47ec-9aab-a284b382922d
Yan, Xingzhao
320b9089-1fb3-485a-8c1f-45fb1f86efa0
Husain, Muhammad K
92db1f76-6760-4cf2-8e30-5d4a602fe15b
De Groot, Kees
92cd2e02-fcc4-43da-8816-c86f966be90c
Saito, Shinichi
14a5d20b-055e-4f48-9dda-267e88bd3fdc
Tsuchiya, Yoshishige
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Ye, Sheng
3cdaba62-b2e3-47ec-9aab-a284b382922d
Yan, Xingzhao
320b9089-1fb3-485a-8c1f-45fb1f86efa0
Husain, Muhammad K
92db1f76-6760-4cf2-8e30-5d4a602fe15b
De Groot, Kees
92cd2e02-fcc4-43da-8816-c86f966be90c
Saito, Shinichi
14a5d20b-055e-4f48-9dda-267e88bd3fdc
Tsuchiya, Yoshishige
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2

Ye, Sheng, Yan, Xingzhao, Husain, Muhammad K, De Groot, Kees, Saito, Shinichi and Tsuchiya, Yoshishige (2021) Direct observation of surface charge redistribution in active nanoscale conducting channels by Kelvin Probe Force Microscopy. Nanotechnology. (doi:10.1088/1361-6528/abfd55).

Record type: Article

Abstract

Surface-exposed uniformly doped Silicon-on-Insulator (SOI) channels are fabricated to evaluate the accuracy of Kelvin Probe Force Microscopy (KPFM) measured surface potential and reveals the role of surface charge on the exposed channel operated in the ambient environment. First, the quality of the potential profile probed in the vacuum environment is assessed by the consistency of converted resistivity from KPFM result to the resistivity extracted by the other three methods. Second, in contrast to the simulated and vacuum surface potential profile and image, the ambient surface potential is bent excessively at the terminals of the channel. The excessive bending can be explained by the movement of surface charge under the drive of geometry induced strong local electric field from the channel and results in non-uniform distribution. The dynamic movement of surface charges is proved by the observation of time-dependent potential drift in the ambient measurement. The result suggests the surface charge effect should be taken into account of the measurement of the surface potential in the ambient environment and the design of charge sensitive devices whose surfaces are exposed to air or in ambient conditions in their operation.

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Ye_et_al_2021_Nanotechnology_10.1088_1361_6528_abfd55 - Accepted Manuscript
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e-pub ahead of print date: 30 April 2021

Identifiers

Local EPrints ID: 449230
URI: http://eprints.soton.ac.uk/id/eprint/449230
ISSN: 0957-4484
PURE UUID: 4b42e823-a2e3-4624-9471-02fac41b7a5b
ORCID for Kees De Groot: ORCID iD orcid.org/0000-0002-3850-7101
ORCID for Shinichi Saito: ORCID iD orcid.org/0000-0003-1539-1182

Catalogue record

Date deposited: 20 May 2021 16:31
Last modified: 21 May 2021 01:44

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Contributors

Author: Sheng Ye
Author: Xingzhao Yan
Author: Muhammad K Husain
Author: Kees De Groot ORCID iD
Author: Shinichi Saito ORCID iD
Author: Yoshishige Tsuchiya

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