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Probing hole spin transport of disorder quantum dots via Pauli spin-blockade in standard silicon transistors

Probing hole spin transport of disorder quantum dots via Pauli spin-blockade in standard silicon transistors
Probing hole spin transport of disorder quantum dots via Pauli spin-blockade in standard silicon transistors
Single hole transport and spin detection is achievable in standard p-type silicon transistors owing to the strong orbital quantization of disorder based quantum dots. Through the use of the well acting as a pseudo-gate, we discover the formation of a double-quantum dot system exhibiting Pauli spin blockade and investigate the magnetic field dependence of the leakage current. This enables attributes that are key to hole spin state control to be determined, where we calculate a tunnel coupling tc of 57 µeV and a short spin-orbit length lSO of 250 nm. The demonstrated strong spin-orbit interaction at the interface when using disorder based quantum dots supports electric-field mediated control. These results provide further motivation that a readily scalable platform such as industry standard silicon technology can be used to investigate interactions which are useful for quantum information processing.
MOSFET, quantum dot, quantum information, single hole transport, spin sensing, spin-orbit interaction, tunnel coupling
0957-4484
Hillier, Joseph William
3621050b-74de-4fb7-b1ee-968965966336
Ono, Keiji
5c1cfe3a-9c61-4baa-8521-920ac56a0137
Ibukuro, Kouta
b863054f-39db-4e0e-a2cb-981a86820dda
Liu, Fayong
beec7ff8-5835-4793-981b-fafd99b52549
Li, Zuo
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Husain, Muhammad K
92db1f76-6760-4cf2-8e30-5d4a602fe15b
Rutt, Harvey
e09fa327-0c01-467a-9898-4e7f0cd715fc
Tomita, Isao
e4a78ed2-f525-4fb0-9711-86e2b2dd5587
Tsuchiya, Yoshishige
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Ishibashi, Koji
00663ab7-1cdb-4ab9-a9c3-36d80f17a727
Saito, Shinichi
14a5d20b-055e-4f48-9dda-267e88bd3fdc
Hillier, Joseph William
3621050b-74de-4fb7-b1ee-968965966336
Ono, Keiji
5c1cfe3a-9c61-4baa-8521-920ac56a0137
Ibukuro, Kouta
b863054f-39db-4e0e-a2cb-981a86820dda
Liu, Fayong
beec7ff8-5835-4793-981b-fafd99b52549
Li, Zuo
05f14f5e-fc6e-446e-ac52-64be640b5e42
Husain, Muhammad K
92db1f76-6760-4cf2-8e30-5d4a602fe15b
Rutt, Harvey
e09fa327-0c01-467a-9898-4e7f0cd715fc
Tomita, Isao
e4a78ed2-f525-4fb0-9711-86e2b2dd5587
Tsuchiya, Yoshishige
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Ishibashi, Koji
00663ab7-1cdb-4ab9-a9c3-36d80f17a727
Saito, Shinichi
14a5d20b-055e-4f48-9dda-267e88bd3fdc

Hillier, Joseph William, Ono, Keiji, Ibukuro, Kouta, Liu, Fayong, Li, Zuo, Husain, Muhammad K, Rutt, Harvey, Tomita, Isao, Tsuchiya, Yoshishige, Ishibashi, Koji and Saito, Shinichi (2021) Probing hole spin transport of disorder quantum dots via Pauli spin-blockade in standard silicon transistors. Nanotechnology, 32 (26), [260001]. (doi:10.1088/1361-6528/abef91).

Record type: Article

Abstract

Single hole transport and spin detection is achievable in standard p-type silicon transistors owing to the strong orbital quantization of disorder based quantum dots. Through the use of the well acting as a pseudo-gate, we discover the formation of a double-quantum dot system exhibiting Pauli spin blockade and investigate the magnetic field dependence of the leakage current. This enables attributes that are key to hole spin state control to be determined, where we calculate a tunnel coupling tc of 57 µeV and a short spin-orbit length lSO of 250 nm. The demonstrated strong spin-orbit interaction at the interface when using disorder based quantum dots supports electric-field mediated control. These results provide further motivation that a readily scalable platform such as industry standard silicon technology can be used to investigate interactions which are useful for quantum information processing.

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Accepted/In Press date: 16 March 2021
e-pub ahead of print date: 7 April 2021
Published date: 25 June 2021
Keywords: MOSFET, quantum dot, quantum information, single hole transport, spin sensing, spin-orbit interaction, tunnel coupling

Identifiers

Local EPrints ID: 449948
URI: http://eprints.soton.ac.uk/id/eprint/449948
ISSN: 0957-4484
PURE UUID: 5fce7e52-c727-464d-a098-bccccfac2ee5
ORCID for Kouta Ibukuro: ORCID iD orcid.org/0000-0002-6546-8873
ORCID for Fayong Liu: ORCID iD orcid.org/0000-0003-4443-9720
ORCID for Shinichi Saito: ORCID iD orcid.org/0000-0003-1539-1182

Catalogue record

Date deposited: 28 Jun 2021 16:32
Last modified: 26 Nov 2021 02:59

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Contributors

Author: Joseph William Hillier
Author: Keiji Ono
Author: Kouta Ibukuro ORCID iD
Author: Fayong Liu ORCID iD
Author: Zuo Li
Author: Muhammad K Husain
Author: Harvey Rutt
Author: Isao Tomita
Author: Yoshishige Tsuchiya
Author: Koji Ishibashi
Author: Shinichi Saito ORCID iD

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