Noori, Yasir, Meng, Lingcong, Hamdiyah, Ayoub Hassan Jaafar, Han, Yisong and Abdelazim, Nema (2021) Dataset supporting the article "Phase Change Memory by GeSbTe Electrodeposition in Crossbar Arrays". University of Southampton doi:10.5258/SOTON/D1907 [Dataset]
Abstract
This dataset is supporting the following publication: "Phase Change Memory by GeSbTe Electrodeposition in Crossbar Arrays" by Yasir J. Noori et al, Applied Electronic Materials, 2021, 3, 8, 3610–3618. https://doi.org/10.1021/acsaelm.1c00491. The dataset contains excel files supporting the following: Figure 2: (b) The consecutive CV scans taken using a TiN microelectrode array in a solution containing 2.5 mM of [NnBu4] GeCl6, 1 mM [NnBu4] SbCl4 and 2 mM [NnBu4]2TeCl6. Figure 5: (a) I-V curves showing 15 voltage sweeps demonstrating phase switching of a micro device in a 10×1 array from its high resistance state (amorphous phase) to its low resistance state (crystalline phase). After every SET operation, the device was RESET using a 5V, 100 ns pulse with a 10 ns rise and fall time. (b) A graph showing the on/off resistance ratio for another device with a demonstrable endurance of around 80 cycles. Resistance distribution of the RESET (c) and SET (d) states. (e) A demonstration of the transition of a device to its low resistance state as the SET pulse width is changed showing that a pulse width greater than 50 µs is needed to induce a reduction in the device’s resistance state.
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