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Dataset supporting the article "Phase Change Memory by GeSbTe Electrodeposition in Crossbar Arrays"

Dataset supporting the article "Phase Change Memory by GeSbTe Electrodeposition in Crossbar Arrays"
Dataset supporting the article "Phase Change Memory by GeSbTe Electrodeposition in Crossbar Arrays"
This dataset is supporting the following publication: "Phase Change Memory by GeSbTe Electrodeposition in Crossbar Arrays" by Yasir J. Noori et al, Applied Electronic Materials, 2021, 3, 8, 3610–3618. https://doi.org/10.1021/acsaelm.1c00491. The dataset contains excel files supporting the following: Figure 2: (b) The consecutive CV scans taken using a TiN microelectrode array in a solution containing 2.5 mM of [NnBu4] GeCl6, 1 mM [NnBu4] SbCl4 and 2 mM [NnBu4]2TeCl6. Figure 5: (a) I-V curves showing 15 voltage sweeps demonstrating phase switching of a micro device in a 10×1 array from its high resistance state (amorphous phase) to its low resistance state (crystalline phase). After every SET operation, the device was RESET using a 5V, 100 ns pulse with a 10 ns rise and fall time. (b) A graph showing the on/off resistance ratio for another device with a demonstrable endurance of around 80 cycles. Resistance distribution of the RESET (c) and SET (d) states. (e) A demonstration of the transition of a device to its low resistance state as the SET pulse width is changed showing that a pulse width greater than 50 µs is needed to induce a reduction in the device’s resistance state.
University of Southampton
Noori, Yasir
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Meng, Lingcong
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Hamdiyah, Ayoub Hassan Jaafar
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Zhang, Wenjian
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Kissling, Gabriela
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Han, Yisong
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Abdelazim, Nema
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Alibouri, Mehrdad
5e9c514c-8fd0-4af8-9171-bfb9647a53ea
Leblanc, Kathleen
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Huang, Ruomeng
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Beanland, Richard
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Smith, David
d9b2c02d-b7ea-498b-9ea1-208a1681536f
Reid, Gillian
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De Groot, Kees
92cd2e02-fcc4-43da-8816-c86f966be90c
Bartlett, Philip
d99446db-a59d-4f89-96eb-f64b5d8bb075
Noori, Yasir
704d0b70-1ea6-4e00-92ce-cc2543087a09
Meng, Lingcong
8de7a0cb-c6aa-4dfd-94f5-bcdae5105a56
Hamdiyah, Ayoub Hassan Jaafar
ca3d9e21-e81e-491e-8a8a-b7b8f6e9fc84
Zhang, Wenjian
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Kissling, Gabriela
b9ad7a6b-70b9-48b6-ac03-a189278dd2d9
Han, Yisong
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Abdelazim, Nema
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Alibouri, Mehrdad
5e9c514c-8fd0-4af8-9171-bfb9647a53ea
Leblanc, Kathleen
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Huang, Ruomeng
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Beanland, Richard
562e4354-94d4-454a-8d45-14e85ececb10
Smith, David
d9b2c02d-b7ea-498b-9ea1-208a1681536f
Reid, Gillian
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De Groot, Kees
92cd2e02-fcc4-43da-8816-c86f966be90c
Bartlett, Philip
d99446db-a59d-4f89-96eb-f64b5d8bb075

Noori, Yasir, Meng, Lingcong, Hamdiyah, Ayoub Hassan Jaafar, Han, Yisong and Abdelazim, Nema (2021) Dataset supporting the article "Phase Change Memory by GeSbTe Electrodeposition in Crossbar Arrays". University of Southampton doi:10.5258/SOTON/D1907 [Dataset]

Record type: Dataset

Abstract

This dataset is supporting the following publication: "Phase Change Memory by GeSbTe Electrodeposition in Crossbar Arrays" by Yasir J. Noori et al, Applied Electronic Materials, 2021, 3, 8, 3610–3618. https://doi.org/10.1021/acsaelm.1c00491. The dataset contains excel files supporting the following: Figure 2: (b) The consecutive CV scans taken using a TiN microelectrode array in a solution containing 2.5 mM of [NnBu4] GeCl6, 1 mM [NnBu4] SbCl4 and 2 mM [NnBu4]2TeCl6. Figure 5: (a) I-V curves showing 15 voltage sweeps demonstrating phase switching of a micro device in a 10×1 array from its high resistance state (amorphous phase) to its low resistance state (crystalline phase). After every SET operation, the device was RESET using a 5V, 100 ns pulse with a 10 ns rise and fall time. (b) A graph showing the on/off resistance ratio for another device with a demonstrable endurance of around 80 cycles. Resistance distribution of the RESET (c) and SET (d) states. (e) A demonstration of the transition of a device to its low resistance state as the SET pulse width is changed showing that a pulse width greater than 50 µs is needed to induce a reduction in the device’s resistance state.

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Published date: 24 July 2021

Identifiers

Local EPrints ID: 450709
URI: http://eprints.soton.ac.uk/id/eprint/450709
PURE UUID: f95e228e-a869-40a9-865a-99b4e579f03f
ORCID for Yasir Noori: ORCID iD orcid.org/0000-0001-5285-8779
ORCID for Lingcong Meng: ORCID iD orcid.org/0000-0002-3995-3584
ORCID for Ayoub Hassan Jaafar Hamdiyah: ORCID iD orcid.org/0000-0001-7305-4542
ORCID for Gabriela Kissling: ORCID iD orcid.org/0000-0003-4701-7160
ORCID for Gillian Reid: ORCID iD orcid.org/0000-0001-5349-3468
ORCID for Kees De Groot: ORCID iD orcid.org/0000-0002-3850-7101
ORCID for Philip Bartlett: ORCID iD orcid.org/0000-0002-7300-6900

Catalogue record

Date deposited: 09 Aug 2021 16:30
Last modified: 27 Apr 2024 02:04

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Contributors

Creator: Yasir Noori ORCID iD
Creator: Lingcong Meng ORCID iD
Creator: Ayoub Hassan Jaafar Hamdiyah ORCID iD
Contributor: Wenjian Zhang
Contributor: Gabriela Kissling ORCID iD
Creator: Yisong Han
Creator: Nema Abdelazim
Contributor: Mehrdad Alibouri
Contributor: Kathleen Leblanc
Contributor: Ruomeng Huang
Research team head: Richard Beanland
Research team head: David Smith
Research team head: Gillian Reid ORCID iD
Research team head: Kees De Groot ORCID iD
Research team head: Philip Bartlett ORCID iD

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