Compact modeling of the switching dynamics and temperature dependencies in TiOx memristors: Part II — Physics Based Model
Compact modeling of the switching dynamics and temperature dependencies in TiOx memristors: Part II — Physics Based Model
In the second part of this series, we propose a physics-based model for describing the temperature dependence of TiOx-based memristors, both switching and static. We show that the current-voltage (I-V) characteristics of memristor in the nonswitching regime, indicating a Schottky emission mechanism, can be described by minor modifications to the Schottky current equation. This leads to a physics-based static I-V compact model. Simultaneously, we show that the temperature dependence of the switching dynamics model parameters naturally emerges as a mere scaling factor from the static I-V model. This is a computationally efficient approach, which does not require any additional parameters to extend the switching dynamics model for incorporating thermal dependence.
Compact model, Mathematical model, Memristors, Resistance, Schottky emission, Switches, Temperature dependence, Temperature measurement, TiOₓ memristors., Voltage measurement, metal-oxide memristors, physics-based model, pulsed resistance transient (PRT) measurements, resistive RAMs, static I-V, switching dynamics, temperature dependence
4885 - 4890
Vaidya, Dhirendra
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Kothari, Shraddha
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Abbey, Thomas
64fcf5bd-e20e-4fb8-9ec4-391ad8a0a7a8
Stathopoulos, Spyros
98d12f06-ad01-4708-be19-a97282968ee6
Michalas, Loukas
25d00d54-5900-485e-bd52-d3505fe881a7
Serb, Alexantrou
30f5ec26-f51d-42b3-85fd-0325a27a792c
Prodromakis, Themistoklis
d58c9c10-9d25-4d22-b155-06c8437acfbf
October 2021
Vaidya, Dhirendra
30b85121-48aa-4f20-9866-1acb2665bba2
Kothari, Shraddha
3f2e70a2-d830-450b-af67-fad24b6ada1a
Abbey, Thomas
64fcf5bd-e20e-4fb8-9ec4-391ad8a0a7a8
Stathopoulos, Spyros
98d12f06-ad01-4708-be19-a97282968ee6
Michalas, Loukas
25d00d54-5900-485e-bd52-d3505fe881a7
Serb, Alexantrou
30f5ec26-f51d-42b3-85fd-0325a27a792c
Prodromakis, Themistoklis
d58c9c10-9d25-4d22-b155-06c8437acfbf
Vaidya, Dhirendra, Kothari, Shraddha, Abbey, Thomas, Stathopoulos, Spyros, Michalas, Loukas, Serb, Alexantrou and Prodromakis, Themistoklis
(2021)
Compact modeling of the switching dynamics and temperature dependencies in TiOx memristors: Part II — Physics Based Model.
IEEE Transactions on Electron Devices, 68 (10), .
(doi:10.1109/TED.2021.3102002).
Abstract
In the second part of this series, we propose a physics-based model for describing the temperature dependence of TiOx-based memristors, both switching and static. We show that the current-voltage (I-V) characteristics of memristor in the nonswitching regime, indicating a Schottky emission mechanism, can be described by minor modifications to the Schottky current equation. This leads to a physics-based static I-V compact model. Simultaneously, we show that the temperature dependence of the switching dynamics model parameters naturally emerges as a mere scaling factor from the static I-V model. This is a computationally efficient approach, which does not require any additional parameters to extend the switching dynamics model for incorporating thermal dependence.
Text
TED_2021_3102002_preprint
- Accepted Manuscript
More information
Accepted/In Press date: 22 July 2021
e-pub ahead of print date: 25 August 2021
Published date: October 2021
Additional Information:
Funding Information:
Manuscript received April 23, 2021; revised July 12, 2021; accepted July 22, 2021. Date of publication August 25, 2021; date of current version September 22, 2021. This work was supported by FORTE which is a UKRI Engineering and Physical Sciences Research Council Programme under Grant EP/R024642/1. The review of this article was arranged by Editor B. K. Kaushik. (Corresponding author: Dhirendra Vaidya.) The authors are with the Centre for Electronics Frontiers, University of Southampton, Southampton SO17 1BJ, U.K. (e-mail: dhirendra22121987@gmail.com; t.prodromakis@soton.ac.uk).
Publisher Copyright:
© 2021 IEEE.
Keywords:
Compact model, Mathematical model, Memristors, Resistance, Schottky emission, Switches, Temperature dependence, Temperature measurement, TiOₓ memristors., Voltage measurement, metal-oxide memristors, physics-based model, pulsed resistance transient (PRT) measurements, resistive RAMs, static I-V, switching dynamics, temperature dependence
Identifiers
Local EPrints ID: 450917
URI: http://eprints.soton.ac.uk/id/eprint/450917
ISSN: 1557-9646
PURE UUID: 0b573480-9089-4469-85a2-307c073848bf
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Date deposited: 20 Aug 2021 16:37
Last modified: 16 Mar 2024 13:38
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Contributors
Author:
Dhirendra Vaidya
Author:
Shraddha Kothari
Author:
Thomas Abbey
Author:
Spyros Stathopoulos
Author:
Loukas Michalas
Author:
Alexantrou Serb
Author:
Themistoklis Prodromakis
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