Hillier, Joseph, William (2021) Investigating stability and tunability of quantum dot transport in silicon MOSFETs via the application of electrical stress. University of Southampton doi:10.5258/SOTON/D1910 [Dataset]
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Abstract
Data set for: Hillier, J. W. et al. (2021). Investigating stability and tunability of quantum dot transport in silicon MOSFETs via the application of electrical stress in IOP Journal of Physics D: Applied Physics
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Published date: 20 October 2021
Identifiers
Local EPrints ID: 451681
URI: http://eprints.soton.ac.uk/id/eprint/451681
PURE UUID: feb6fa6e-884a-44b7-9b13-7fc0bc621f9b
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Date deposited: 19 Oct 2021 16:33
Last modified: 06 Jun 2024 01:50
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Contributors
Creator:
Joseph, William Hillier
Contributor:
Kouta Ibukuro
Contributor:
Fayong Liu
Contributor:
Muhammad Khaled Husain
Contributor:
James J Byers
Contributor:
Harvey Rutt
Contributor:
Isao Tomita
Contributor:
Yoshishige Tsuchiya
Contributor:
Shinichi Saito
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