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Low pressure CVD of GeE (E = Te, Se, S) thin films from alkylgermanium chalcogenolate precursors and effect of the deposition temperature on the thermoelectric performance of GeTe

Low pressure CVD of GeE (E = Te, Se, S) thin films from alkylgermanium chalcogenolate precursors and effect of the deposition temperature on the thermoelectric performance of GeTe
Low pressure CVD of GeE (E = Te, Se, S) thin films from alkylgermanium chalcogenolate precursors and effect of the deposition temperature on the thermoelectric performance of GeTe

The homologous series [GenBu3(EnBu)] (E = Te, Se, S; (1), (3) and (4)) and [GenBu2(TenBu)2] (2) have been synthesized as mobile oils in excellent yield (72-93%) and evaluated as single-source precursors for the low-pressure chemical vapor deposition (LPCVD) of GeE thin films on silica. Compositional and structural characterizations of the deposits have been performed by grazing-incidence X-ray diffraction, scanning electron microscopy, energy-dispersive X-ray analysis, and Raman spectroscopy, confirming the phase purity and stoichiometry. Electrical characterization via variable-temperature Hall effect measurements is also reported. Given the strong interest in GeTe and its alloys for thermoelectric applications, variable-temperature Seebeck data were also investigated for a series of p-type GeTe films. The data show that it is possible to tune the thermoelectric response through intrinsic Ge vacancy regulation by varying the deposition temperature, with the highest power factor (40 μW/K2cm@629 K) and effective ZT values observed for the films deposited at higher temperatures.

GeS, GeSe, GeTe, chemical vapor deposition, single source precursor, thermoelectric, thin film
1944-8244
47773-47783
Robinson, Fred
8fc7b408-097f-4550-b189-5b6e3a49bf93
Sethi, Vikesh
e0c3adf8-b928-46c4-b59f-4428cafe7774
De Groot, Kees
92cd2e02-fcc4-43da-8816-c86f966be90c
Hector, Andrew L.
f19a8f31-b37f-4474-b32a-b7cf05b9f0e5
Huang, Ruomeng
c6187811-ef2f-4437-8333-595c0d6ac978
Reid, Gillian
37d35b11-40ce-48c5-a68e-f6ce04cd4037
Robinson, Fred
8fc7b408-097f-4550-b189-5b6e3a49bf93
Sethi, Vikesh
e0c3adf8-b928-46c4-b59f-4428cafe7774
De Groot, Kees
92cd2e02-fcc4-43da-8816-c86f966be90c
Hector, Andrew L.
f19a8f31-b37f-4474-b32a-b7cf05b9f0e5
Huang, Ruomeng
c6187811-ef2f-4437-8333-595c0d6ac978
Reid, Gillian
37d35b11-40ce-48c5-a68e-f6ce04cd4037

Robinson, Fred, Sethi, Vikesh, De Groot, Kees, Hector, Andrew L., Huang, Ruomeng and Reid, Gillian (2021) Low pressure CVD of GeE (E = Te, Se, S) thin films from alkylgermanium chalcogenolate precursors and effect of the deposition temperature on the thermoelectric performance of GeTe. ACS Applied Materials & Interfaces, 13 (40), 47773-47783. (doi:10.1021/acsami.1c14237).

Record type: Article

Abstract

The homologous series [GenBu3(EnBu)] (E = Te, Se, S; (1), (3) and (4)) and [GenBu2(TenBu)2] (2) have been synthesized as mobile oils in excellent yield (72-93%) and evaluated as single-source precursors for the low-pressure chemical vapor deposition (LPCVD) of GeE thin films on silica. Compositional and structural characterizations of the deposits have been performed by grazing-incidence X-ray diffraction, scanning electron microscopy, energy-dispersive X-ray analysis, and Raman spectroscopy, confirming the phase purity and stoichiometry. Electrical characterization via variable-temperature Hall effect measurements is also reported. Given the strong interest in GeTe and its alloys for thermoelectric applications, variable-temperature Seebeck data were also investigated for a series of p-type GeTe films. The data show that it is possible to tune the thermoelectric response through intrinsic Ge vacancy regulation by varying the deposition temperature, with the highest power factor (40 μW/K2cm@629 K) and effective ZT values observed for the films deposited at higher temperatures.

Text
GeE MS - revised final 15_09_2021 - clean copy - Accepted Manuscript
Restricted to Repository staff only until 31 October 2022.
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Text
SI GeE MS final revised 15_09_2021
Restricted to Repository staff only
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More information

Accepted/In Press date: 17 September 2021
e-pub ahead of print date: 4 October 2021
Published date: 31 October 2021
Additional Information: Publisher Copyright: © Copyright: Copyright 2021 Elsevier B.V., All rights reserved.
Keywords: GeS, GeSe, GeTe, chemical vapor deposition, single source precursor, thermoelectric, thin film

Identifiers

Local EPrints ID: 451824
URI: http://eprints.soton.ac.uk/id/eprint/451824
ISSN: 1944-8244
PURE UUID: 1170ca28-378c-418a-9894-4cb9ab3a1e31
ORCID for Kees De Groot: ORCID iD orcid.org/0000-0002-3850-7101
ORCID for Andrew L. Hector: ORCID iD orcid.org/0000-0002-9964-2163
ORCID for Ruomeng Huang: ORCID iD orcid.org/0000-0003-1185-635X
ORCID for Gillian Reid: ORCID iD orcid.org/0000-0001-5349-3468

Catalogue record

Date deposited: 28 Oct 2021 16:36
Last modified: 06 May 2022 01:43

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Contributors

Author: Fred Robinson
Author: Vikesh Sethi
Author: Kees De Groot ORCID iD
Author: Ruomeng Huang ORCID iD
Author: Gillian Reid ORCID iD

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