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Electrodeposition of GeSbTe-based resistive switching memory in crossbar arrays

Electrodeposition of GeSbTe-based resistive switching memory in crossbar arrays
Electrodeposition of GeSbTe-based resistive switching memory in crossbar arrays
In this work, we report on the fabrication of resistive random-access memory cells based on electrodeposited GeSbTe material between TiN top and bottom electrodes in a crossbar architecture. The cells exhibit asymmetric bipolar resistive switching characteristics under the same SET and RESET compliance current (CC), showing highly uniform and reproducible switching properties. A multi-state switching behavior can be also achieved by varying the sweeping voltage and CC. Unlike phase-change switching, the switching between the high-resistance state and the low-resistance state in these cells can be attributed to the formation and rupture of conductive Te bridge(s) within the Te-rich GeSbTe matrix upon application of a high electric field. The results point toward the usage of the electrodeposition method to fabricate advanced functional device structures for application in non-volatile memory.
1932-7447
26247-26255
Jaafar, Ayoub H.
ca3d9e21-e81e-491e-8a8a-b7b8f6e9fc84
Meng, Lingcong
8de7a0cb-c6aa-4dfd-94f5-bcdae5105a56
Noori, Yasir J.
704d0b70-1ea6-4e00-92ce-cc2543087a09
Zhang, Wenjian
1f80ac5e-d4c2-4720-b19e-be700cd411e7
Han, Yisong
9307e57c-85b5-461d-93c5-9c3081224c02
Beanland, Richard
2ccecc30-c09f-4331-9cad-2d3e64e3fe1d
Smith, David C.
d9b2c02d-b7ea-498b-9ea1-208a1681536f
Reid, Gillian
37d35b11-40ce-48c5-a68e-f6ce04cd4037
De Groot, Kees
92cd2e02-fcc4-43da-8816-c86f966be90c
Huang, Ruomeng
c6187811-ef2f-4437-8333-595c0d6ac978
Bartlett, Philip N.
d99446db-a59d-4f89-96eb-f64b5d8bb075
Jaafar, Ayoub H.
ca3d9e21-e81e-491e-8a8a-b7b8f6e9fc84
Meng, Lingcong
8de7a0cb-c6aa-4dfd-94f5-bcdae5105a56
Noori, Yasir J.
704d0b70-1ea6-4e00-92ce-cc2543087a09
Zhang, Wenjian
1f80ac5e-d4c2-4720-b19e-be700cd411e7
Han, Yisong
9307e57c-85b5-461d-93c5-9c3081224c02
Beanland, Richard
2ccecc30-c09f-4331-9cad-2d3e64e3fe1d
Smith, David C.
d9b2c02d-b7ea-498b-9ea1-208a1681536f
Reid, Gillian
37d35b11-40ce-48c5-a68e-f6ce04cd4037
De Groot, Kees
92cd2e02-fcc4-43da-8816-c86f966be90c
Huang, Ruomeng
c6187811-ef2f-4437-8333-595c0d6ac978
Bartlett, Philip N.
d99446db-a59d-4f89-96eb-f64b5d8bb075

Jaafar, Ayoub H., Meng, Lingcong, Noori, Yasir J., Zhang, Wenjian, Han, Yisong, Beanland, Richard, Smith, David C., Reid, Gillian, De Groot, Kees, Huang, Ruomeng and Bartlett, Philip N. (2021) Electrodeposition of GeSbTe-based resistive switching memory in crossbar arrays. Journal of Physical Chemistry C, 125 (47), 26247-26255. (doi:10.1021/acs.jpcc.1c08549).

Record type: Article

Abstract

In this work, we report on the fabrication of resistive random-access memory cells based on electrodeposited GeSbTe material between TiN top and bottom electrodes in a crossbar architecture. The cells exhibit asymmetric bipolar resistive switching characteristics under the same SET and RESET compliance current (CC), showing highly uniform and reproducible switching properties. A multi-state switching behavior can be also achieved by varying the sweeping voltage and CC. Unlike phase-change switching, the switching between the high-resistance state and the low-resistance state in these cells can be attributed to the formation and rupture of conductive Te bridge(s) within the Te-rich GeSbTe matrix upon application of a high electric field. The results point toward the usage of the electrodeposition method to fabricate advanced functional device structures for application in non-volatile memory.

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Accepted/In Press date: 19 November 2021
Published date: 2 December 2021
Additional Information: Funding Information: This work is part of the ADEPT project funded by a program grant from the EPSRC (EP/N035437/1).

Identifiers

Local EPrints ID: 454497
URI: http://eprints.soton.ac.uk/id/eprint/454497
ISSN: 1932-7447
PURE UUID: 6abfce68-be3b-4591-be7b-df58152db652
ORCID for Ayoub H. Jaafar: ORCID iD orcid.org/0000-0001-7305-4542
ORCID for Lingcong Meng: ORCID iD orcid.org/0000-0002-3995-3584
ORCID for Yasir J. Noori: ORCID iD orcid.org/0000-0001-5285-8779
ORCID for Gillian Reid: ORCID iD orcid.org/0000-0001-5349-3468
ORCID for Kees De Groot: ORCID iD orcid.org/0000-0002-3850-7101
ORCID for Ruomeng Huang: ORCID iD orcid.org/0000-0003-1185-635X
ORCID for Philip N. Bartlett: ORCID iD orcid.org/0000-0002-7300-6900

Catalogue record

Date deposited: 14 Feb 2022 17:34
Last modified: 06 May 2022 01:43

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Contributors

Author: Ayoub H. Jaafar ORCID iD
Author: Lingcong Meng ORCID iD
Author: Yasir J. Noori ORCID iD
Author: Wenjian Zhang
Author: Yisong Han
Author: Richard Beanland
Author: David C. Smith
Author: Gillian Reid ORCID iD
Author: Kees De Groot ORCID iD
Author: Ruomeng Huang ORCID iD

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