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Thermal effects on initial volatile response and relaxation dynamics of resistive RAM devices

Thermal effects on initial volatile response and relaxation dynamics of resistive RAM devices
Thermal effects on initial volatile response and relaxation dynamics of resistive RAM devices
Resistive RAM (RRAM) or memristors are a class of electronic device whose resistance depends on voltage history. The changes in resistance can be divided into two categories, volatile and non-volatile. To date, the characteristics of non-volatile switching have been explored extensively with volatile switching behaviour still remaining more obscure. Here we investigate the temperature effects on TiOx based memristor volatility, and integrate these observations into a previously developed model for volatile switching. We show how device temperature affects the magnitude of the volatile resistive state in response to input stimulation, as well as the corresponding relaxation time constant. Importantly, these effects are polarity dependent. This work is part of an effort towards building a more comprehensive model of RRAM behaviour covering volatile and non-volatile phenomena as well as various environmental effects on them.
Memristors, RRAM, modelling, thermal volatility
0741-3106
386 - 389
Abbey, Thomas
64fcf5bd-e20e-4fb8-9ec4-391ad8a0a7a8
Giotis, Christos
2b14de78-3ff1-425d-ac4b-10fbf228377c
Serb, Alexantrou
30f5ec26-f51d-42b3-85fd-0325a27a792c
Stathopoulos, Spyros
98d12f06-ad01-4708-be19-a97282968ee6
Prodromakis, Themistoklis
d58c9c10-9d25-4d22-b155-06c8437acfbf
Abbey, Thomas
64fcf5bd-e20e-4fb8-9ec4-391ad8a0a7a8
Giotis, Christos
2b14de78-3ff1-425d-ac4b-10fbf228377c
Serb, Alexantrou
30f5ec26-f51d-42b3-85fd-0325a27a792c
Stathopoulos, Spyros
98d12f06-ad01-4708-be19-a97282968ee6
Prodromakis, Themistoklis
d58c9c10-9d25-4d22-b155-06c8437acfbf

Abbey, Thomas, Giotis, Christos, Serb, Alexantrou, Stathopoulos, Spyros and Prodromakis, Themistoklis (2022) Thermal effects on initial volatile response and relaxation dynamics of resistive RAM devices. IEEE Electron Device Letters, 43 (3), 386 - 389. (doi:10.1109/LED.2022.3145620).

Record type: Article

Abstract

Resistive RAM (RRAM) or memristors are a class of electronic device whose resistance depends on voltage history. The changes in resistance can be divided into two categories, volatile and non-volatile. To date, the characteristics of non-volatile switching have been explored extensively with volatile switching behaviour still remaining more obscure. Here we investigate the temperature effects on TiOx based memristor volatility, and integrate these observations into a previously developed model for volatile switching. We show how device temperature affects the magnitude of the volatile resistive state in response to input stimulation, as well as the corresponding relaxation time constant. Importantly, these effects are polarity dependent. This work is part of an effort towards building a more comprehensive model of RRAM behaviour covering volatile and non-volatile phenomena as well as various environmental effects on them.

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Accepted/In Press date: 17 December 2021
e-pub ahead of print date: 21 January 2022
Published date: 1 March 2022
Keywords: Memristors, RRAM, modelling, thermal volatility

Identifiers

Local EPrints ID: 455905
URI: http://eprints.soton.ac.uk/id/eprint/455905
ISSN: 0741-3106
PURE UUID: e0a4c1d3-7c34-4f2f-9f50-f4fef01afe9b
ORCID for Spyros Stathopoulos: ORCID iD orcid.org/0000-0002-0833-6209
ORCID for Themistoklis Prodromakis: ORCID iD orcid.org/0000-0002-6267-6909

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Date deposited: 07 Apr 2022 16:58
Last modified: 22 Jul 2022 01:47

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Contributors

Author: Thomas Abbey
Author: Christos Giotis
Author: Alexantrou Serb
Author: Spyros Stathopoulos ORCID iD
Author: Themistoklis Prodromakis ORCID iD

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