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Advanced characterisation and modelling of SiGe HBT's

Advanced characterisation and modelling of SiGe HBT's
Advanced characterisation and modelling of SiGe HBT's

This thesis investigates advanced characterisation and modelling techniques for silicon-germanium heterojunction bipolar transistor (SiGe HBT's). Two characterisation techniques are proposed and evaluated to enable, as much as is possible, direct electrical extraction of physical device characteristics which are unique to SiGe HBT's, as opposed to standard silicon-only bipolar transistors. Principal objectives motivating the new characterisation techniques are the elimination of silicon control devices and the use of widely available measurement apparatus.

The bandgap difference across the neutral base extraction method is further developed for extracting the parasitic potential barrier height in a SiGe HBT. The proposed method is shown to be able to extract the parasitic potential barrier heights at the emitter-base and collector base junctions of SiGe HBT's simultaneously in conjunction with numerical space-charge layer modelling using doping secondary-ion-mass spectroscopy (SIMS) profile data. It provides a more direct measure of parasitic barrier-related quantities and does not depend upon a detailed knowledge of the temperature dependence of SiGe density of states functions, carrier mobility, etc.. Numerical simulations and measurement results show that the method gives useful and representative values regarding the parasitic potential barrier height.

Finally, the potential of a proposed novel lateral SiGe HBT structure for high performance rf/microwave applications is assessed. Various issues regarding the lateral structure, including base definition and base contact, are discussed. Compared to a state-of-the art vertical SiGe HBT structure, the lateral structure is found to have many advantages for low power rf/microwave applications. A realistic comparison is carried out by means of full 2-D numerical simulation. Numerical simulation results indicate that a lateral SiGe HBT structure can potentially out-perform a vertical structure in term of low power and high frequency performance.

University of Southampton
Tang, Yue Teng
Tang, Yue Teng

Tang, Yue Teng (2000) Advanced characterisation and modelling of SiGe HBT's. University of Southampton, Doctoral Thesis.

Record type: Thesis (Doctoral)

Abstract

This thesis investigates advanced characterisation and modelling techniques for silicon-germanium heterojunction bipolar transistor (SiGe HBT's). Two characterisation techniques are proposed and evaluated to enable, as much as is possible, direct electrical extraction of physical device characteristics which are unique to SiGe HBT's, as opposed to standard silicon-only bipolar transistors. Principal objectives motivating the new characterisation techniques are the elimination of silicon control devices and the use of widely available measurement apparatus.

The bandgap difference across the neutral base extraction method is further developed for extracting the parasitic potential barrier height in a SiGe HBT. The proposed method is shown to be able to extract the parasitic potential barrier heights at the emitter-base and collector base junctions of SiGe HBT's simultaneously in conjunction with numerical space-charge layer modelling using doping secondary-ion-mass spectroscopy (SIMS) profile data. It provides a more direct measure of parasitic barrier-related quantities and does not depend upon a detailed knowledge of the temperature dependence of SiGe density of states functions, carrier mobility, etc.. Numerical simulations and measurement results show that the method gives useful and representative values regarding the parasitic potential barrier height.

Finally, the potential of a proposed novel lateral SiGe HBT structure for high performance rf/microwave applications is assessed. Various issues regarding the lateral structure, including base definition and base contact, are discussed. Compared to a state-of-the art vertical SiGe HBT structure, the lateral structure is found to have many advantages for low power rf/microwave applications. A realistic comparison is carried out by means of full 2-D numerical simulation. Numerical simulation results indicate that a lateral SiGe HBT structure can potentially out-perform a vertical structure in term of low power and high frequency performance.

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Published date: 2000

Identifiers

Local EPrints ID: 467026
URI: http://eprints.soton.ac.uk/id/eprint/467026
PURE UUID: fd2d0114-056b-4d8e-ba10-95eb59f66774

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Date deposited: 05 Jul 2022 08:09
Last modified: 05 Jul 2022 08:09

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Author: Yue Teng Tang

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