Flexible Ta2O5/WO3-based memristor synapse for wearable and neuromorphic applications
Flexible Ta2O5/WO3-based memristor synapse for wearable and neuromorphic applications
In this letter, Ta 2 O 5 /WO 3 double-layer wearable memristor synapse has excellent recognition accuracy (97%) for just 12 epochs compared to the single-layer device (83%). The insertion of an ultra-thin WO 3 layer modulates the oxygen vacancy distribution in Ta 2 O 5 and induces digital-to-analog switching behavior. Excellent AC endurance of (>10 9 cycles) under 2 mm extreme bending, a rapid speed (25 ns), reliable bending endurance for 10 4 cycles with 4 mm bending, stable retention (>10 6 s) up to 200°C, and water-resistant behavior are achieved. The potentiation, and depression having outstanding nonlinearity (0.64) is obtained. The Ta 2 O 5 /WO 3 design is a promising candidate for wearable neuromorphic applications due to its wearability, flexibility, lightweight, low cost and environmental friendly fabrication.
9-12
Rajasekaran, Sailesh
c4dc4a00-888e-4900-b0f8-200b9aca6913
Simanjuntak, Firman
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Chandrasekaran, Sridhar
8aece1e1-b034-4f63-b0b1-f9b1e4490765
Panda, Debashis
e94eb431-589e-4a0a-82b8-0647442c0c5f
Saleem, Aftab
2cfadc0c-48ae-4979-95a9-06bca4f6b743
Tseng, Tseung-Yuen
b25672b0-7cd2-4c52-bb91-14d56d2777a9
10 November 2021
Rajasekaran, Sailesh
c4dc4a00-888e-4900-b0f8-200b9aca6913
Simanjuntak, Firman
a5b8dd07-002c-4520-9f67-2dc20d2ff0d5
Chandrasekaran, Sridhar
8aece1e1-b034-4f63-b0b1-f9b1e4490765
Panda, Debashis
e94eb431-589e-4a0a-82b8-0647442c0c5f
Saleem, Aftab
2cfadc0c-48ae-4979-95a9-06bca4f6b743
Tseng, Tseung-Yuen
b25672b0-7cd2-4c52-bb91-14d56d2777a9
Rajasekaran, Sailesh, Simanjuntak, Firman, Chandrasekaran, Sridhar, Panda, Debashis, Saleem, Aftab and Tseng, Tseung-Yuen
(2021)
Flexible Ta2O5/WO3-based memristor synapse for wearable and neuromorphic applications.
IEEE Electron Device Letters, 43 (1), .
(doi:10.1109/LED.2021.3127489).
Abstract
In this letter, Ta 2 O 5 /WO 3 double-layer wearable memristor synapse has excellent recognition accuracy (97%) for just 12 epochs compared to the single-layer device (83%). The insertion of an ultra-thin WO 3 layer modulates the oxygen vacancy distribution in Ta 2 O 5 and induces digital-to-analog switching behavior. Excellent AC endurance of (>10 9 cycles) under 2 mm extreme bending, a rapid speed (25 ns), reliable bending endurance for 10 4 cycles with 4 mm bending, stable retention (>10 6 s) up to 200°C, and water-resistant behavior are achieved. The potentiation, and depression having outstanding nonlinearity (0.64) is obtained. The Ta 2 O 5 /WO 3 design is a promising candidate for wearable neuromorphic applications due to its wearability, flexibility, lightweight, low cost and environmental friendly fabrication.
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Published date: 10 November 2021
Identifiers
Local EPrints ID: 474281
URI: http://eprints.soton.ac.uk/id/eprint/474281
ISSN: 0741-3106
PURE UUID: 1f3e97e4-1184-4267-a41b-469b0e152a01
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Date deposited: 17 Feb 2023 17:30
Last modified: 17 Mar 2024 03:59
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Contributors
Author:
Sailesh Rajasekaran
Author:
Firman Simanjuntak
Author:
Sridhar Chandrasekaran
Author:
Debashis Panda
Author:
Aftab Saleem
Author:
Tseung-Yuen Tseng
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