Datatset for the journal article 'Tungsten dichalcogenide WS2xSe2-2x films via single source precursor low-pressure CVD and their (thermo-)electric properties'

Abstract

Data in support of the journal article published in Journal of Materials Chemistry A This dataset contains: The raw data of figure 3 to 8. The figures are as follows: Figure 3. Grazing incidence X-ray diffraction patterns of the as-deposited WS2xSe2-2x films from (1)-(4). Figure 4. Raman spectral scan presented over a range of 50-450 cm-1, of the as-deposited WS2xSe2-2x. films. Figure 5. Elemental XPS scans of (a) W 4f, (b) Se 3d and (c) S 2p for all as-deposited WS2xSe2-2x films deposited from precursors (1)–(4). (d) Composition of all the as-deposited films deposited from precursors (1)–(4). Figure 6. (a) Temperature-dependent electrical conductivity, (b) Arrhenius plot for WS2xSe2-2x films deposited from precursors (1)-(4). (c) Electrical conductivity and (d) Hall measurements against the chalcogenide content of the films. Figure 7. (a) Carrier concentration and (b) carrier mobility of the as-deposited binary films, WS2 (red) and WSe2 (orange). Compared with the films annealed at 500oC in the respective chalcogenide atmospheres. Figure 8. Temperature-dependent (a) Seebeck, and (b) power factor measurements for the WS2xSe2-2x films deposited from precursors (1)-(4).

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