Effects of annealing silicon ion irradiated rib waveguides with respect to free carrier lifetime
Effects of annealing silicon ion irradiated rib waveguides with respect to free carrier lifetime
Previously we have reported the effects of silicon ion irradiation on free carrier lifetime and propagation loss in silicon rib waveguides, and simulated net Raman gain based on experimental results. We further extend this work by reporting the effects of thermally treating a silicon irradiated sample with a higher dose and energy than previously reported, which produced a poor trade-off between free carrier lifetime and excess optical absorption prior to thermal treatment. Excess losses greater than 80dB/cm were recorded prior to annealing. After thermal treatment, the sample demonstrated characteristics of excess loss and free carrier lifetime recorded previously in much lower energy and dose silicon ion irradiated samples, suggesting that thermally treating samples could enhance the trade-off between free carrier lifetime and excess loss introduced to the rib waveguides. Raman gain simulations based on the new experimental data are reported and show an increase in net gain over previously reported data, suggesting that higher dose, shallow silicon ion implantation is the most efficient way of optimising the trade-off between lifetime reduction and excess optical absorption in silicon rib waveguides, a proposal in our earlier work. The effects of thermally treating low temperature oxide clad waveguides with respect to free carrier lifetime are also reported. Results show that thermally treating a low temperature oxide clad waveguide can vary the intrinsic lifetime. The results of this investigation as well as a discussion into the possible origin of the lifetime change are given.
Integrated optoelectronic circuits, Optical amplifiers, Waveguides
Wright, Nicholas M.
f4685b8d-7496-47dc-95f0-aba3f70fbccd
Smith, Andrew J.
f719dbf6-612c-4ecb-9ec8-ae0ac74928eb
Litvinenko, Konstantin
b67c6dfa-1f93-4ee0-a053-19b2a5638b31
Gwilliam, Russell
05728edb-27e0-4939-8b23-5d76f33786d6
Mashanovich, Goran
c806e262-af80-4836-b96f-319425060051
Reed, Graham T.
ca08dd60-c072-4d7d-b254-75714d570139
16 February 2010
Wright, Nicholas M.
f4685b8d-7496-47dc-95f0-aba3f70fbccd
Smith, Andrew J.
f719dbf6-612c-4ecb-9ec8-ae0ac74928eb
Litvinenko, Konstantin
b67c6dfa-1f93-4ee0-a053-19b2a5638b31
Gwilliam, Russell
05728edb-27e0-4939-8b23-5d76f33786d6
Mashanovich, Goran
c806e262-af80-4836-b96f-319425060051
Reed, Graham T.
ca08dd60-c072-4d7d-b254-75714d570139
Wright, Nicholas M., Smith, Andrew J., Litvinenko, Konstantin, Gwilliam, Russell, Mashanovich, Goran and Reed, Graham T.
(2010)
Effects of annealing silicon ion irradiated rib waveguides with respect to free carrier lifetime.
Kubby, Joel A. and Reed, Graham T.
(eds.)
In Silicon Photonics V.
vol. 7606,
SPIE.
9 pp
.
(doi:10.1117/12.838582).
Record type:
Conference or Workshop Item
(Paper)
Abstract
Previously we have reported the effects of silicon ion irradiation on free carrier lifetime and propagation loss in silicon rib waveguides, and simulated net Raman gain based on experimental results. We further extend this work by reporting the effects of thermally treating a silicon irradiated sample with a higher dose and energy than previously reported, which produced a poor trade-off between free carrier lifetime and excess optical absorption prior to thermal treatment. Excess losses greater than 80dB/cm were recorded prior to annealing. After thermal treatment, the sample demonstrated characteristics of excess loss and free carrier lifetime recorded previously in much lower energy and dose silicon ion irradiated samples, suggesting that thermally treating samples could enhance the trade-off between free carrier lifetime and excess loss introduced to the rib waveguides. Raman gain simulations based on the new experimental data are reported and show an increase in net gain over previously reported data, suggesting that higher dose, shallow silicon ion implantation is the most efficient way of optimising the trade-off between lifetime reduction and excess optical absorption in silicon rib waveguides, a proposal in our earlier work. The effects of thermally treating low temperature oxide clad waveguides with respect to free carrier lifetime are also reported. Results show that thermally treating a low temperature oxide clad waveguide can vary the intrinsic lifetime. The results of this investigation as well as a discussion into the possible origin of the lifetime change are given.
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Published date: 16 February 2010
Venue - Dates:
Silicon Photonics V, , San Francisco, CA, United States, 2010-01-24 - 2010-01-27
Keywords:
Integrated optoelectronic circuits, Optical amplifiers, Waveguides
Identifiers
Local EPrints ID: 481834
URI: http://eprints.soton.ac.uk/id/eprint/481834
ISSN: 0277-786X
PURE UUID: b037fc42-c24f-437c-b03e-5f5d62f8b955
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Date deposited: 11 Sep 2023 16:36
Last modified: 29 Oct 2024 02:45
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Contributors
Author:
Konstantin Litvinenko
Author:
Russell Gwilliam
Author:
Goran Mashanovich
Author:
Graham T. Reed
Editor:
Joel A. Kubby
Editor:
Graham T. Reed
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