Novel types of silicon waveguides fabricated using proton beam irradiation
Novel types of silicon waveguides fabricated using proton beam irradiation
In this work, we describe the use of a combination of proton beam irradiation and electrochemical etching to fabricate high index-contrast waveguides directly in silicon without the need for silicon-on-insulator substrate. Various types of waveguides with air or porous silicon cladding have been demonstrated. We show that porous silicon (PS) is a flexible cladding material due to the tunability of its refractive index and thickness. The Si/PS waveguide system also possesses better transmittance in the ranges of 1.2-9 and 23-200 μm, compared to Si/SiO2 waveguides. This is potentially important for mid and far-IR applications. Since it is compatible with conventional CMOS technology, this process can be used for fabrication of integrated optoelectronics circuits.
Electrochemical etching, Porous silicon, Silicon photonics, Silicon-on-insulator, Waveguides
Teo, E.J.
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Yang, P.
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Xiong, B.Q.
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Breese, M.B.H.
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Mashanovich, G.Z.
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Ow, Y.S.
970802ba-0620-40d0-b591-697e4d1e633b
Reed, G.T.
ca08dd60-c072-4d7d-b254-75714d570139
Bettiol, A.A.
ebeefad1-b7f1-4f93-ba09-e9b1a52536fb
10 February 2010
Teo, E.J.
28e9c459-5f68-48a1-92ed-f4c525407291
Yang, P.
85579e43-72eb-41f6-a8f8-d63cd683904b
Xiong, B.Q.
0f25cb61-a0cb-4390-8210-15d3b391e538
Breese, M.B.H.
6ddfddc2-98b2-4408-a3e2-e39586d50548
Mashanovich, G.Z.
c806e262-af80-4836-b96f-319425060051
Ow, Y.S.
970802ba-0620-40d0-b591-697e4d1e633b
Reed, G.T.
ca08dd60-c072-4d7d-b254-75714d570139
Bettiol, A.A.
ebeefad1-b7f1-4f93-ba09-e9b1a52536fb
Teo, E.J., Yang, P., Xiong, B.Q., Breese, M.B.H., Mashanovich, G.Z., Ow, Y.S., Reed, G.T. and Bettiol, A.A.
(2010)
Novel types of silicon waveguides fabricated using proton beam irradiation.
Kubby, Joel A. and Reed, Graham T.
(eds.)
In Silicon Photonics V.
vol. 7606,
SPIE.
8 pp
.
(doi:10.1117/12.841536).
Record type:
Conference or Workshop Item
(Paper)
Abstract
In this work, we describe the use of a combination of proton beam irradiation and electrochemical etching to fabricate high index-contrast waveguides directly in silicon without the need for silicon-on-insulator substrate. Various types of waveguides with air or porous silicon cladding have been demonstrated. We show that porous silicon (PS) is a flexible cladding material due to the tunability of its refractive index and thickness. The Si/PS waveguide system also possesses better transmittance in the ranges of 1.2-9 and 23-200 μm, compared to Si/SiO2 waveguides. This is potentially important for mid and far-IR applications. Since it is compatible with conventional CMOS technology, this process can be used for fabrication of integrated optoelectronics circuits.
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Published date: 10 February 2010
Venue - Dates:
Silicon Photonics V, , San Francisco, CA, United States, 2010-01-24 - 2010-01-27
Keywords:
Electrochemical etching, Porous silicon, Silicon photonics, Silicon-on-insulator, Waveguides
Identifiers
Local EPrints ID: 481857
URI: http://eprints.soton.ac.uk/id/eprint/481857
ISSN: 0277-786X
PURE UUID: ae211657-1a0c-4431-8094-b5f9ee2da976
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Date deposited: 11 Sep 2023 17:03
Last modified: 29 Oct 2024 02:45
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Contributors
Author:
E.J. Teo
Author:
P. Yang
Author:
B.Q. Xiong
Author:
M.B.H. Breese
Author:
G.Z. Mashanovich
Author:
Y.S. Ow
Author:
G.T. Reed
Author:
A.A. Bettiol
Editor:
Joel A. Kubby
Editor:
Graham T. Reed
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