Monolithic coupling between high- and mid-index, multi-micron waveguides for O-band applications

Abstract

In this work, a coupling strategy between mid-index SiNx and high-index active waveguides on the same silicon chip is proposed. To that aim, a sophisticated proof-of-concept integration between N-rich SiN and SOI micro-metric waveguides is demonstrated achieving a <0.5 dB coupling for both TE/TM polarisations. The optical tunability of SiNx allows the mitigation of the mid-high refractive index discrepancy by interposing a SiO ₂/Si-rich SiN double-layer anti-reflective coating, attaining back-reflections close to −20 dB. On that basis, it is shown numerically that a sub-dB interconnection between multiple-quantum well/dot stratified stacks and a silicon nitride passive waveguide is achievable, while keeping the introduced back-reflection level below −30 dB.

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