Bias-stress effects in PE-ALD poly-crystalline ZnO-TFTs
Bias-stress effects in PE-ALD poly-crystalline ZnO-TFTs
We report on the impact of fixed bias-stress on the electrical characteristics of polycrystalline ZnO thin-film transistors (TFT). Positive and negative bias stress is typically explored in amorphous metal-oxide TFTs, often at a single fixed bias point. In this work, we examine bias-stress effects in ZnO-TFTs with multiple fixed gate-source voltages (VGS(fixed)), across a 24-hour period for each voltage point. Threshold voltage (Vth) is used to assess changes in ZnO-TFT electrical characteristics, with a stretched-exponential fit to model temporal trends in Vth. This method provides an insight into long-term charge carrier migration between polycrystalline ZnO channel and dielectric materials.
Rowlinson, Ben D.
bc965d73-a1d3-4e19-bff3-e57ee4a0acbe
Zeng, Jiale
a76aaa33-5b24-4590-849d-12d8fdd44618
Chong, Harold M.H.
795aa67f-29e5-480f-b1bc-9bd5c0d558e1
8 July 2024
Rowlinson, Ben D.
bc965d73-a1d3-4e19-bff3-e57ee4a0acbe
Zeng, Jiale
a76aaa33-5b24-4590-849d-12d8fdd44618
Chong, Harold M.H.
795aa67f-29e5-480f-b1bc-9bd5c0d558e1
Rowlinson, Ben D., Zeng, Jiale and Chong, Harold M.H.
(2024)
Bias-stress effects in PE-ALD poly-crystalline ZnO-TFTs.
UK Semiconductors, Sheffield, United Kingdom.
1 pp
.
Record type:
Conference or Workshop Item
(Other)
Abstract
We report on the impact of fixed bias-stress on the electrical characteristics of polycrystalline ZnO thin-film transistors (TFT). Positive and negative bias stress is typically explored in amorphous metal-oxide TFTs, often at a single fixed bias point. In this work, we examine bias-stress effects in ZnO-TFTs with multiple fixed gate-source voltages (VGS(fixed)), across a 24-hour period for each voltage point. Threshold voltage (Vth) is used to assess changes in ZnO-TFT electrical characteristics, with a stretched-exponential fit to model temporal trends in Vth. This method provides an insight into long-term charge carrier migration between polycrystalline ZnO channel and dielectric materials.
Text
Abstract_UKSEMI_2024_v1
- Accepted Manuscript
More information
Published date: 8 July 2024
Venue - Dates:
UK Semiconductors, Sheffield, United Kingdom, 2008-07-02
Identifiers
Local EPrints ID: 493040
URI: http://eprints.soton.ac.uk/id/eprint/493040
PURE UUID: 8959dea6-12d2-4681-965a-15fa299c1253
Catalogue record
Date deposited: 22 Aug 2024 16:31
Last modified: 23 Aug 2024 01:41
Export record
Contributors
Author:
Ben D. Rowlinson
Author:
Jiale Zeng
Author:
Harold M.H. Chong
Download statistics
Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.
View more statistics