Toward a procedure for the template free growth of Te nanowires across an insulator by electrodeposition
Toward a procedure for the template free growth of Te nanowires across an insulator by electrodeposition
In this work, we present a method for direct, site-selective growth of tellurium nanowires by electrochemical deposition. The Te nanowires were grown laterally between two specially designed nanoband electrodes across a gap, and over a dielectric material, forming a lateral device structure directly. The resulting wires are crystalline and phase pure, as evidenced by Raman spectroscopy, EDS (energy dispersive X-ray spectroscopy), and ADF-STEM (annular dark field scanning transmission electron microscopy). The precise conditions for lateral growth of the nanowires were investigated and the fabrication of an electronic device from the as-deposited material, without the need for any transfer process or further contact fabrication, is demonstrated.
deposition, electrodeposition, electrodes, gold, nanowires
18634-18640
Black, Alexander W.
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Abdelazim, Nema M.
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Noori, Yasir J.
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Han, Yisong
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Zhelev, Nikolay
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Thomas, Shibin
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Zhang, Wenjian
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Reid, Gillian
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Beanland, Richard
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de Groot, C.H.Kees
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Bartlett, Philip N.
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22 October 2024
Black, Alexander W.
afede714-ea39-480d-b9e8-4d2af1d930c8
Abdelazim, Nema M.
2ac8bd5e-cbf1-4d9a-adcb-65dedf244b9b
Noori, Yasir J.
704d0b70-1ea6-4e00-92ce-cc2543087a09
Han, Yisong
9307e57c-85b5-461d-93c5-9c3081224c02
Zhelev, Nikolay
76a8a0dd-0c24-4483-a217-b17ee26bd79b
Thomas, Shibin
f9dd0751-582b-4c35-9725-36fbe08bbda8
Zhang, Wenjian
1f80ac5e-d4c2-4720-b19e-be700cd411e7
Reid, Gillian
37d35b11-40ce-48c5-a68e-f6ce04cd4037
Beanland, Richard
2ccecc30-c09f-4331-9cad-2d3e64e3fe1d
de Groot, C.H.Kees
92cd2e02-fcc4-43da-8816-c86f966be90c
Bartlett, Philip N.
d99446db-a59d-4f89-96eb-f64b5d8bb075
Black, Alexander W., Abdelazim, Nema M., Noori, Yasir J., Han, Yisong, Zhelev, Nikolay, Thomas, Shibin, Zhang, Wenjian, Reid, Gillian, Beanland, Richard, de Groot, C.H.Kees and Bartlett, Philip N.
(2024)
Toward a procedure for the template free growth of Te nanowires across an insulator by electrodeposition.
Journal of Physical Chemistry C, 128 (43), .
(doi:10.1021/acs.jpcc.4c05915).
Abstract
In this work, we present a method for direct, site-selective growth of tellurium nanowires by electrochemical deposition. The Te nanowires were grown laterally between two specially designed nanoband electrodes across a gap, and over a dielectric material, forming a lateral device structure directly. The resulting wires are crystalline and phase pure, as evidenced by Raman spectroscopy, EDS (energy dispersive X-ray spectroscopy), and ADF-STEM (annular dark field scanning transmission electron microscopy). The precise conditions for lateral growth of the nanowires were investigated and the fabrication of an electronic device from the as-deposited material, without the need for any transfer process or further contact fabrication, is demonstrated.
Text
black-et-al-2024-toward-a-procedure-for-the-template-free-growth-of-te-nanowires-across-an-insulator-by
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More information
Accepted/In Press date: 11 October 2024
Published date: 22 October 2024
Keywords:
deposition, electrodeposition, electrodes, gold, nanowires
Identifiers
Local EPrints ID: 496277
URI: http://eprints.soton.ac.uk/id/eprint/496277
ISSN: 1932-7447
PURE UUID: 4703b2e0-6be4-4b4f-ad69-5f2e84945950
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Date deposited: 10 Dec 2024 17:59
Last modified: 11 Dec 2024 02:58
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Contributors
Author:
Alexander W. Black
Author:
Nema M. Abdelazim
Author:
Yasir J. Noori
Author:
Yisong Han
Author:
Richard Beanland
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