Test dataset for "Low-temperature Al2O3/ZnO thin-film transistors for 3D heterogeneous integration: interface engineering, bias stress instability, and reliability mechanisms"
Test dataset for "Low-temperature Al2O3/ZnO thin-film transistors for 3D heterogeneous integration: interface engineering, bias stress instability, and reliability mechanisms"
This dataset contains current–voltage (I–V) measurement data of Al₂O₃/ZnO thin-film transistors fabricated at deposition temperatures ranging from 150°C to 300°C. The dataset includes transfer characteristics (Id–Vg) measured under different bias conditions and device geometries, along with extracted electrical parameters such as threshold voltage (Vth), subthreshold swing (SS), mobility, and on/off current ratio. This dataset supports the associated doctoral thesis on interface engineering and reliability mechanisms of ZnO TFTs for 3D heterogeneous integration.
ZnO thin-film transistors, Al₂O₃ gate dielectric, I–V measurement, threshold voltage, interface engineering, bias stress instability
University of Southampton
Zeng, Jiale
a76aaa33-5b24-4590-849d-12d8fdd44618
Zeng, Jiale
a76aaa33-5b24-4590-849d-12d8fdd44618
Zeng, Jiale
(2026)
Test dataset for "Low-temperature Al2O3/ZnO thin-film transistors for 3D heterogeneous integration: interface engineering, bias stress instability, and reliability mechanisms".
University of Southampton
doi:10.5258/SOTON/D3906
[Dataset]
Abstract
This dataset contains current–voltage (I–V) measurement data of Al₂O₃/ZnO thin-film transistors fabricated at deposition temperatures ranging from 150°C to 300°C. The dataset includes transfer characteristics (Id–Vg) measured under different bias conditions and device geometries, along with extracted electrical parameters such as threshold voltage (Vth), subthreshold swing (SS), mobility, and on/off current ratio. This dataset supports the associated doctoral thesis on interface engineering and reliability mechanisms of ZnO TFTs for 3D heterogeneous integration.
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B1500A.zip
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thesis_dataset_readme.txt
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Published date: 2026
Keywords:
ZnO thin-film transistors, Al₂O₃ gate dielectric, I–V measurement, threshold voltage, interface engineering, bias stress instability
Identifiers
Local EPrints ID: 510333
URI: http://eprints.soton.ac.uk/id/eprint/510333
PURE UUID: 35d69fb1-0ee8-4627-a3e7-f0fb41143145
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Date deposited: 26 Mar 2026 17:44
Last modified: 28 Mar 2026 03:04
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Contributors
Creator:
Jiale Zeng
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