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Femtosecond laser induced forward transfer techniques for the deposition of nanoscale, intact, and solid-phase material

Femtosecond laser induced forward transfer techniques for the deposition of nanoscale, intact, and solid-phase material
Femtosecond laser induced forward transfer techniques for the deposition of nanoscale, intact, and solid-phase material
The subject of this thesis is the study of the Laser Induced Forward Transfer (LIFT) technique with femtosecond duration pulses. In principle, femtosecond-LIFT should offer a number of advantages over traditional nanosecond-LIFT in terms of achievable resolution and transferring intact and solid phase material.A novel solid phase etching technique that uniquely allows for simultaneous deposition of the etched material, also in solid phase, has been presented. Micron deep holes and trenches have been produced in Si and silica substrates by the generation of large shocks in a thin Cr layer by absorption of femtosecond pulses. The shock initiated the propagation of cracks in the bulk substrates that ultimately lead to etching of whole sections of material.
Banks, David Paul
e55f0c2e-0a30-4e07-a419-d506594f0f6e
Banks, David Paul
e55f0c2e-0a30-4e07-a419-d506594f0f6e
Eason, Robert
e38684c3-d18c-41b9-a4aa-def67283b020

Banks, David Paul (2008) Femtosecond laser induced forward transfer techniques for the deposition of nanoscale, intact, and solid-phase material. University of Southampton, Optoelectronic Research Centre, Doctoral Thesis, 206pp.

Record type: Thesis (Doctoral)

Abstract

The subject of this thesis is the study of the Laser Induced Forward Transfer (LIFT) technique with femtosecond duration pulses. In principle, femtosecond-LIFT should offer a number of advantages over traditional nanosecond-LIFT in terms of achievable resolution and transferring intact and solid phase material.A novel solid phase etching technique that uniquely allows for simultaneous deposition of the etched material, also in solid phase, has been presented. Micron deep holes and trenches have been produced in Si and silica substrates by the generation of large shocks in a thin Cr layer by absorption of femtosecond pulses. The shock initiated the propagation of cracks in the bulk substrates that ultimately lead to etching of whole sections of material.

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Published date: November 2008
Organisations: University of Southampton

Identifiers

Local EPrints ID: 65817
URI: https://eprints.soton.ac.uk/id/eprint/65817
PURE UUID: eff554ec-0f22-4eab-8ca1-1d01ea1597c5
ORCID for Robert Eason: ORCID iD orcid.org/0000-0001-9704-2204

Catalogue record

Date deposited: 31 Mar 2009
Last modified: 25 Jan 2019 01:39

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