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Group IV mid-infrared photonics [Invited]

Group IV mid-infrared photonics [Invited]
Group IV mid-infrared photonics [Invited]

In this paper we review our recent results on group IV mid-infrared photonic devices. In particular, passive structures suitable for long wavelength operation, such as suspended Si, Ge-on-Si and suspended Ge, are analyzed. In addition, Ge-on-insulator waveguides have been characterized at 3.8 μm. Several active devices have been also realized: optical modulators in silicon and germanium, and silicon and graphene detectors operating at shorter mid-IR wavelengths.

2276-2286
Mashanovich, G.Z.
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Nedeljković, M.
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Soler-Penadés, J.
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Qu, Z.
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Cao, W.
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Osman, A.
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Wu, Y.
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Stirling, C.J.
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Qi, Y.
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Xu-Cheng, Y.
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Reid, L.
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Littlejohns, C.G.
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Kang, J.
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Zhao, Z.
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Takenaka, M.
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Li, T.
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Zhou, Z.
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Gardes, F.Y.
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Thomson, D.J.
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Reed, G.T.
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Mashanovich, G.Z.
c806e262-af80-4836-b96f-319425060051
Nedeljković, M.
b64e21c2-1b95-479d-a35c-3456dff8c796
Soler-Penadés, J.
f18f3619-0d71-4547-95fd-dd38c37b7adb
Qu, Z.
ff376b43-4352-4bd2-8420-c1c6cfccd45c
Cao, W.
5202fa2b-a471-45d4-84e9-9104dffdbbfc
Osman, A.
eb387b50-c718-47df-ac90-97b2efd3e335
Wu, Y.
40ee10b0-fd7d-4990-a62c-1d35722a22b8
Stirling, C.J.
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Qi, Y.
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Xu-Cheng, Y.
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Reid, L.
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Littlejohns, C.G.
d2837f04-0a83-4bf9-acb2-618aa42a0cad
Kang, J.
586dc089-0e2a-4b1c-b253-f0e293271441
Zhao, Z.
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Takenaka, M.
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Li, T.
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Zhou, Z.
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Gardes, F.Y.
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Thomson, D.J.
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Reed, G.T.
ca08dd60-c072-4d7d-b254-75714d570139

Mashanovich, G.Z., Nedeljković, M., Soler-Penadés, J., Qu, Z., Cao, W., Osman, A., Wu, Y., Stirling, C.J., Qi, Y., Xu-Cheng, Y., Reid, L., Littlejohns, C.G., Kang, J., Zhao, Z., Takenaka, M., Li, T., Zhou, Z., Gardes, F.Y., Thomson, D.J. and Reed, G.T. (2018) Group IV mid-infrared photonics [Invited]. Optical Materials Express, 8 (8), 2276-2286. (doi:10.1364/OME.8.002276).

Record type: Article

Abstract

In this paper we review our recent results on group IV mid-infrared photonic devices. In particular, passive structures suitable for long wavelength operation, such as suspended Si, Ge-on-Si and suspended Ge, are analyzed. In addition, Ge-on-insulator waveguides have been characterized at 3.8 μm. Several active devices have been also realized: optical modulators in silicon and germanium, and silicon and graphene detectors operating at shorter mid-IR wavelengths.

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More information

Accepted/In Press date: 11 April 2018
e-pub ahead of print date: 19 July 2018
Published date: 1 August 2018

Identifiers

Local EPrints ID: 420121
URI: http://eprints.soton.ac.uk/id/eprint/420121
PURE UUID: 5492479a-c536-4d94-ba61-55e28f5f3e77
ORCID for M. Nedeljković: ORCID iD orcid.org/0000-0002-9170-7911
ORCID for J. Soler-Penadés: ORCID iD orcid.org/0000-0002-1706-8533
ORCID for W. Cao: ORCID iD orcid.org/0000-0003-1431-7060
ORCID for A. Osman: ORCID iD orcid.org/0000-0001-6575-3861
ORCID for F.Y. Gardes: ORCID iD orcid.org/0000-0003-1400-3272

Catalogue record

Date deposited: 27 Apr 2018 16:30
Last modified: 28 Mar 2024 05:02

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Contributors

Author: M. Nedeljković ORCID iD
Author: J. Soler-Penadés ORCID iD
Author: Z. Qu
Author: W. Cao ORCID iD
Author: A. Osman ORCID iD
Author: Y. Wu
Author: C.J. Stirling
Author: Y. Qi
Author: Y. Xu-Cheng
Author: L. Reid
Author: J. Kang
Author: Z. Zhao
Author: M. Takenaka
Author: T. Li
Author: Z. Zhou
Author: F.Y. Gardes ORCID iD
Author: D.J. Thomson
Author: G.T. Reed

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