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Conduction mechanisms at distinct resistive levels of Pt/TiO2-x/Pt memristors

Conduction mechanisms at distinct resistive levels of Pt/TiO2-x/Pt memristors
Conduction mechanisms at distinct resistive levels of Pt/TiO2-x/Pt memristors
Resistive random access memories (RRAMs) are considered as key enabling components for a variety of emerging applications due to their capacity to support multiple resistive states. Deciphering the underlying mechanisms that support resistive switching remains to date a topic of debate, particularly for metal-oxide technologies and is very much needed for optimizing their performance. This work aims to identify the dominant conduction mechanisms during switching operation of Pt/TiO2-x/Pt stacks, which is without a doubt one of the most celebrated ones. A number of identical devices were accordingly electroformed for acquiring distinct resistive levels through a pulsing-based and compliance-free protocol. For each obtained level the switching current-voltage (I-V) characteristics were recorded and analyzed in the temperature range of 300 K to 350 K. This allowed the extraction of the corresponding signature plots revealing the dominant transport mechanism for each of the I-V branches. Gradual (analogue) switching was obtained for all cases and two major regimes were identified. For the higher resistance regime the transport at both the high and low resistive states was found to be interface controlled due to Schottky emission. As the resistance of devices reduces to lower levels, the dominant conduction changes from an interface to core-material controlled mechanism. This study overall supports that engineering the metal-oxide/metal electrode interface can lead to tailored barrier modifications for controlling the switching characteristics of TiO2 RRAM.
0003-6951
1-4
Michalas, Loukas
25d00d54-5900-485e-bd52-d3505fe881a7
Stathopoulos, Spyros
98d12f06-ad01-4708-be19-a97282968ee6
Khiat, Ali
bf549ddd-5356-4a7d-9c12-eb6c0d904050
Prodromakis, Themis
d58c9c10-9d25-4d22-b155-06c8437acfbf
Michalas, Loukas
25d00d54-5900-485e-bd52-d3505fe881a7
Stathopoulos, Spyros
98d12f06-ad01-4708-be19-a97282968ee6
Khiat, Ali
bf549ddd-5356-4a7d-9c12-eb6c0d904050
Prodromakis, Themis
d58c9c10-9d25-4d22-b155-06c8437acfbf

Michalas, Loukas, Stathopoulos, Spyros, Khiat, Ali and Prodromakis, Themis (2018) Conduction mechanisms at distinct resistive levels of Pt/TiO2-x/Pt memristors. Applied Physics Letters, 113 (14), 1-4. (doi:10.1063/1.5040936).

Record type: Letter

Abstract

Resistive random access memories (RRAMs) are considered as key enabling components for a variety of emerging applications due to their capacity to support multiple resistive states. Deciphering the underlying mechanisms that support resistive switching remains to date a topic of debate, particularly for metal-oxide technologies and is very much needed for optimizing their performance. This work aims to identify the dominant conduction mechanisms during switching operation of Pt/TiO2-x/Pt stacks, which is without a doubt one of the most celebrated ones. A number of identical devices were accordingly electroformed for acquiring distinct resistive levels through a pulsing-based and compliance-free protocol. For each obtained level the switching current-voltage (I-V) characteristics were recorded and analyzed in the temperature range of 300 K to 350 K. This allowed the extraction of the corresponding signature plots revealing the dominant transport mechanism for each of the I-V branches. Gradual (analogue) switching was obtained for all cases and two major regimes were identified. For the higher resistance regime the transport at both the high and low resistive states was found to be interface controlled due to Schottky emission. As the resistance of devices reduces to lower levels, the dominant conduction changes from an interface to core-material controlled mechanism. This study overall supports that engineering the metal-oxide/metal electrode interface can lead to tailored barrier modifications for controlling the switching characteristics of TiO2 RRAM.

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Accepted manuscript Conduction mechanisms at distinct resistive levels of Pt/TiO2_x/Pt memristors - Accepted Manuscript
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More information

Accepted/In Press date: 15 September 2018
e-pub ahead of print date: 3 October 2018
Published date: October 2018

Identifiers

Local EPrints ID: 424984
URI: https://eprints.soton.ac.uk/id/eprint/424984
ISSN: 0003-6951
PURE UUID: c3887255-ee8f-4cfe-8b01-6604b41b50b2
ORCID for Spyros Stathopoulos: ORCID iD orcid.org/0000-0002-0833-6209
ORCID for Themis Prodromakis: ORCID iD orcid.org/0000-0002-6267-6909

Catalogue record

Date deposited: 08 Oct 2018 16:30
Last modified: 10 Dec 2019 01:35

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