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Low temperature CVD of thermoelectric SnTe thin films from the single source precursor, [nBu3Sn(TenBu)]

Low temperature CVD of thermoelectric SnTe thin films from the single source precursor, [nBu3Sn(TenBu)]
Low temperature CVD of thermoelectric SnTe thin films from the single source precursor, [nBu3Sn(TenBu)]
This work has demonstrated that the single source precursor [nBu3Sn(TenBu)], bearing n-butyl groups and containing the necessary 1 : 1 Sn : Te ratio, facilitates growth of continuous, stoichiometric SnTe thin films. This single source CVD precursor allows film growth at significantly lower temperatures (355–434 °C at 0.01–0.05 Torr) than required for CVD from SnTe powder. This could be advantageous for controlling the surface states in topological insulators. The temperature-dependent thermoelectric performance of these films has been determined, revealing them to be p-type semiconductors with peak Seebeck coefficient and power factor values of 78 μV K−1 and 8.3 μW K−2 cm-1, respectively, at 615 K; comparing favourably with data from bulk SnTe. Further, we have demonstrated that the precursor facilitates area selective growth of SnTe onto the TiN regions of SiO2/TiN patterned substrates, which is expected to be beneficial for the fabrication of micro-thermoelectric generators.
0300-9246
998-1006
Robinson, Fred
8fc7b408-097f-4550-b189-5b6e3a49bf93
Newbrook, Daniel William
380b603a-3de2-40d3-b008-2fa079341513
Curran, Peter
90dcaf4b-b881-4c28-bdac-cb692dd88879
De Groot, Kees
92cd2e02-fcc4-43da-8816-c86f966be90c
Hardie, Duncan
aad06fc3-41b6-4d76-a63e-f619dc856ff5
Hector, Andrew L.
f19a8f31-b37f-4474-b32a-b7cf05b9f0e5
Huang, Ruomeng
c6187811-ef2f-4437-8333-595c0d6ac978
Reid, Gillian
37d35b11-40ce-48c5-a68e-f6ce04cd4037
Robinson, Fred
8fc7b408-097f-4550-b189-5b6e3a49bf93
Newbrook, Daniel William
380b603a-3de2-40d3-b008-2fa079341513
Curran, Peter
90dcaf4b-b881-4c28-bdac-cb692dd88879
De Groot, Kees
92cd2e02-fcc4-43da-8816-c86f966be90c
Hardie, Duncan
aad06fc3-41b6-4d76-a63e-f619dc856ff5
Hector, Andrew L.
f19a8f31-b37f-4474-b32a-b7cf05b9f0e5
Huang, Ruomeng
c6187811-ef2f-4437-8333-595c0d6ac978
Reid, Gillian
37d35b11-40ce-48c5-a68e-f6ce04cd4037

Robinson, Fred, Newbrook, Daniel William, Curran, Peter, De Groot, Kees, Hardie, Duncan, Hector, Andrew L., Huang, Ruomeng and Reid, Gillian (2021) Low temperature CVD of thermoelectric SnTe thin films from the single source precursor, [nBu3Sn(TenBu)]. Dalton Transactions, 50 (3), 998-1006. (doi:10.1039/D0DT03760E).

Record type: Article

Abstract

This work has demonstrated that the single source precursor [nBu3Sn(TenBu)], bearing n-butyl groups and containing the necessary 1 : 1 Sn : Te ratio, facilitates growth of continuous, stoichiometric SnTe thin films. This single source CVD precursor allows film growth at significantly lower temperatures (355–434 °C at 0.01–0.05 Torr) than required for CVD from SnTe powder. This could be advantageous for controlling the surface states in topological insulators. The temperature-dependent thermoelectric performance of these films has been determined, revealing them to be p-type semiconductors with peak Seebeck coefficient and power factor values of 78 μV K−1 and 8.3 μW K−2 cm-1, respectively, at 615 K; comparing favourably with data from bulk SnTe. Further, we have demonstrated that the precursor facilitates area selective growth of SnTe onto the TiN regions of SiO2/TiN patterned substrates, which is expected to be beneficial for the fabrication of micro-thermoelectric generators.

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SnTe Dalton final revised 11th Dec 2020 - no highlighting - Accepted Manuscript
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SnTe ESI final 22_10_20
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Accepted/In Press date: 14 December 2020
e-pub ahead of print date: 16 December 2020
Published date: 21 January 2021

Identifiers

Local EPrints ID: 446265
URI: http://eprints.soton.ac.uk/id/eprint/446265
ISSN: 0300-9246
PURE UUID: 8e4db7ea-f61e-477a-a52e-f80390d675eb
ORCID for Daniel William Newbrook: ORCID iD orcid.org/0000-0002-5047-6168
ORCID for Kees De Groot: ORCID iD orcid.org/0000-0002-3850-7101
ORCID for Andrew L. Hector: ORCID iD orcid.org/0000-0002-9964-2163
ORCID for Gillian Reid: ORCID iD orcid.org/0000-0001-5349-3468

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Date deposited: 02 Feb 2021 17:30
Last modified: 17 Mar 2021 02:53

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Contributors

Author: Fred Robinson
Author: Daniel William Newbrook ORCID iD
Author: Peter Curran
Author: Kees De Groot ORCID iD
Author: Duncan Hardie
Author: Ruomeng Huang
Author: Gillian Reid ORCID iD

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