Low temperature CVD of thermoelectric SnTe thin films from the single source precursor, [nBu3Sn(TenBu)]
Low temperature CVD of thermoelectric SnTe thin films from the single source precursor, [nBu3Sn(TenBu)]
This work has demonstrated that the single source precursor [nBu3Sn(TenBu)], bearing n-butyl groups and containing the necessary 1 : 1 Sn : Te ratio, facilitates growth of continuous, stoichiometric SnTe thin films. This single source CVD precursor allows film growth at significantly lower temperatures (355–434 °C at 0.01–0.05 Torr) than required for CVD from SnTe powder. This could be advantageous for controlling the surface states in topological insulators. The temperature-dependent thermoelectric performance of these films has been determined, revealing them to be p-type semiconductors with peak Seebeck coefficient and power factor values of 78 μV K−1 and 8.3 μW K−2 cm-1, respectively, at 615 K; comparing favourably with data from bulk SnTe. Further, we have demonstrated that the precursor facilitates area selective growth of SnTe onto the TiN regions of SiO2/TiN patterned substrates, which is expected to be beneficial for the fabrication of micro-thermoelectric generators.
998-1006
Robinson, Fred
8fc7b408-097f-4550-b189-5b6e3a49bf93
Newbrook, Daniel W
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Curran, Peter
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De Groot, Kees
92cd2e02-fcc4-43da-8816-c86f966be90c
Hardie, Duncan
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Hector, Andrew L.
f19a8f31-b37f-4474-b32a-b7cf05b9f0e5
Huang, Ruomeng
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Reid, Gillian
37d35b11-40ce-48c5-a68e-f6ce04cd4037
21 January 2021
Robinson, Fred
8fc7b408-097f-4550-b189-5b6e3a49bf93
Newbrook, Daniel W
8eb26553-e1e2-492d-ad78-ce51a487f31f
Curran, Peter
90dcaf4b-b881-4c28-bdac-cb692dd88879
De Groot, Kees
92cd2e02-fcc4-43da-8816-c86f966be90c
Hardie, Duncan
aad06fc3-41b6-4d76-a63e-f619dc856ff5
Hector, Andrew L.
f19a8f31-b37f-4474-b32a-b7cf05b9f0e5
Huang, Ruomeng
c6187811-ef2f-4437-8333-595c0d6ac978
Reid, Gillian
37d35b11-40ce-48c5-a68e-f6ce04cd4037
Robinson, Fred, Newbrook, Daniel W, Curran, Peter, De Groot, Kees, Hardie, Duncan, Hector, Andrew L., Huang, Ruomeng and Reid, Gillian
(2021)
Low temperature CVD of thermoelectric SnTe thin films from the single source precursor, [nBu3Sn(TenBu)].
Dalton Transactions, 50 (3), .
(doi:10.1039/D0DT03760E).
Abstract
This work has demonstrated that the single source precursor [nBu3Sn(TenBu)], bearing n-butyl groups and containing the necessary 1 : 1 Sn : Te ratio, facilitates growth of continuous, stoichiometric SnTe thin films. This single source CVD precursor allows film growth at significantly lower temperatures (355–434 °C at 0.01–0.05 Torr) than required for CVD from SnTe powder. This could be advantageous for controlling the surface states in topological insulators. The temperature-dependent thermoelectric performance of these films has been determined, revealing them to be p-type semiconductors with peak Seebeck coefficient and power factor values of 78 μV K−1 and 8.3 μW K−2 cm-1, respectively, at 615 K; comparing favourably with data from bulk SnTe. Further, we have demonstrated that the precursor facilitates area selective growth of SnTe onto the TiN regions of SiO2/TiN patterned substrates, which is expected to be beneficial for the fabrication of micro-thermoelectric generators.
Text
SnTe Dalton final revised 11th Dec 2020 - no highlighting
- Accepted Manuscript
Text
SnTe ESI final 22_10_20
More information
Accepted/In Press date: 14 December 2020
e-pub ahead of print date: 16 December 2020
Published date: 21 January 2021
Additional Information:
Funding Information:
We thank the EPSRC for a CASE studentship to F. R. (EP/ N509747/1) and an iCASE studentship to D. W. N. We also thank Deregallera Ltd and BAE Systems for funding for F. R. and D. W. N., respectively.
Publisher Copyright:
© The Royal Society of Chemistry.
Identifiers
Local EPrints ID: 446265
URI: http://eprints.soton.ac.uk/id/eprint/446265
ISSN: 0300-9246
PURE UUID: 8e4db7ea-f61e-477a-a52e-f80390d675eb
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Date deposited: 02 Feb 2021 17:30
Last modified: 10 Apr 2024 02:07
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Contributors
Author:
Fred Robinson
Author:
Daniel W Newbrook
Author:
Peter Curran
Author:
Duncan Hardie
Author:
Ruomeng Huang
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