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Formation of a ternary oxide barrier layer and its role in switching characteristic of ZnO-based conductive bridge random access memory devices

Formation of a ternary oxide barrier layer and its role in switching characteristic of ZnO-based conductive bridge random access memory devices
Formation of a ternary oxide barrier layer and its role in switching characteristic of ZnO-based conductive bridge random access memory devices
The insertion of a metal layer between an active electrode and a switching layer leads to the formation of a ternary oxide at the interface. The properties of this self-formed oxide are found to be dependent on the Gibbs free energy of oxide formation of the metal (Δ퐺∘푓). We investigated the role of various ternary oxides in the switching behavior of conductive bridge random access memory (CBRAM) devices. The ternary oxide acts as a barrier layer that can limit the mobility of metal cations in the cell, promoting stable switching. However, too low (higher negative value) Δ퐺∘푓 leads to severe trade-offs; the devices require high operation current and voltages to exhibit switching behavior and low memory window (on/off) ratio. We propose that choosing a metal layer having appropriate Δ퐺∘푓 is crucial in achieving reliable CBRAM devices.
2166-532X
Simanjuntak, Firman
a5b8dd07-002c-4520-9f67-2dc20d2ff0d5
Panidi, Ioulianna
c98ba267-2648-4fc7-804d-f4cb95bf2484
Talbi, Fayzah
9f4ee979-ca6a-4497-b62a-5aae661e167c
Kerrigan, Adam
7bd6c6e0-d8ef-4f84-bc74-1bedab13330e
Lazarov, Vlado K.
83021bf7-42df-43bd-8db2-da4080e7f342
Prodromakis, Themistoklis
d58c9c10-9d25-4d22-b155-06c8437acfbf
Simanjuntak, Firman
a5b8dd07-002c-4520-9f67-2dc20d2ff0d5
Panidi, Ioulianna
c98ba267-2648-4fc7-804d-f4cb95bf2484
Talbi, Fayzah
9f4ee979-ca6a-4497-b62a-5aae661e167c
Kerrigan, Adam
7bd6c6e0-d8ef-4f84-bc74-1bedab13330e
Lazarov, Vlado K.
83021bf7-42df-43bd-8db2-da4080e7f342
Prodromakis, Themistoklis
d58c9c10-9d25-4d22-b155-06c8437acfbf

Simanjuntak, Firman, Panidi, Ioulianna, Talbi, Fayzah, Kerrigan, Adam, Lazarov, Vlado K. and Prodromakis, Themistoklis (2022) Formation of a ternary oxide barrier layer and its role in switching characteristic of ZnO-based conductive bridge random access memory devices. APL Materials, 10 (3), [031103]. (doi:10.1063/5.0076903).

Record type: Article

Abstract

The insertion of a metal layer between an active electrode and a switching layer leads to the formation of a ternary oxide at the interface. The properties of this self-formed oxide are found to be dependent on the Gibbs free energy of oxide formation of the metal (Δ퐺∘푓). We investigated the role of various ternary oxides in the switching behavior of conductive bridge random access memory (CBRAM) devices. The ternary oxide acts as a barrier layer that can limit the mobility of metal cations in the cell, promoting stable switching. However, too low (higher negative value) Δ퐺∘푓 leads to severe trade-offs; the devices require high operation current and voltages to exhibit switching behavior and low memory window (on/off) ratio. We propose that choosing a metal layer having appropriate Δ퐺∘푓 is crucial in achieving reliable CBRAM devices.

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Accepted/In Press date: 10 February 2022
e-pub ahead of print date: 3 March 2022

Identifiers

Local EPrints ID: 455226
URI: http://eprints.soton.ac.uk/id/eprint/455226
ISSN: 2166-532X
PURE UUID: 3faeba4a-0a25-4e0e-a707-e132ca9c6a60
ORCID for Themistoklis Prodromakis: ORCID iD orcid.org/0000-0002-6267-6909

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Date deposited: 15 Mar 2022 17:46
Last modified: 28 Apr 2022 02:09

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Contributors

Author: Firman Simanjuntak
Author: Ioulianna Panidi
Author: Fayzah Talbi
Author: Adam Kerrigan
Author: Vlado K. Lazarov
Author: Themistoklis Prodromakis ORCID iD

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