Formation of a ternary oxide barrier layer and its role in switching characteristic of ZnO-based conductive bridge random access memory devices
Formation of a ternary oxide barrier layer and its role in switching characteristic of ZnO-based conductive bridge random access memory devices
The insertion of a metal layer between an active electrode and a switching layer leads to the formation of a ternary oxide at the interface. The properties of this self-formed oxide are found to be dependent on the Gibbs free energy of oxide formation of the metal (ΔGf°). We investigated the role of various ternary oxides in the switching behavior of conductive bridge random access memory (CBRAM) devices. The ternary oxide acts as a barrier layer that can limit the mobility of metal cations in the cell, promoting stable switching. However, too low (higher negative value) ΔGf° leads to severe trade-offs; the devices require high operation current and voltages to exhibit switching behavior and low memory window (on/off) ratio. We propose that choosing a metal layer having appropriate ΔGf° is crucial in achieving reliable CBRAM devices.
Simanjuntak, Firman
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Panidi, Ioulianna
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Talbi, Fayzah
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Kerrigan, Adam
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Lazarov, Vlado K.
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Prodromakis, Themistoklis
d58c9c10-9d25-4d22-b155-06c8437acfbf
3 March 2022
Simanjuntak, Firman
a5b8dd07-002c-4520-9f67-2dc20d2ff0d5
Panidi, Ioulianna
c98ba267-2648-4fc7-804d-f4cb95bf2484
Talbi, Fayzah
9f4ee979-ca6a-4497-b62a-5aae661e167c
Kerrigan, Adam
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Lazarov, Vlado K.
83021bf7-42df-43bd-8db2-da4080e7f342
Prodromakis, Themistoklis
d58c9c10-9d25-4d22-b155-06c8437acfbf
Simanjuntak, Firman, Panidi, Ioulianna, Talbi, Fayzah, Kerrigan, Adam, Lazarov, Vlado K. and Prodromakis, Themistoklis
(2022)
Formation of a ternary oxide barrier layer and its role in switching characteristic of ZnO-based conductive bridge random access memory devices.
APL Materials, 10 (3), [031103].
(doi:10.1063/5.0076903).
Abstract
The insertion of a metal layer between an active electrode and a switching layer leads to the formation of a ternary oxide at the interface. The properties of this self-formed oxide are found to be dependent on the Gibbs free energy of oxide formation of the metal (ΔGf°). We investigated the role of various ternary oxides in the switching behavior of conductive bridge random access memory (CBRAM) devices. The ternary oxide acts as a barrier layer that can limit the mobility of metal cations in the cell, promoting stable switching. However, too low (higher negative value) ΔGf° leads to severe trade-offs; the devices require high operation current and voltages to exhibit switching behavior and low memory window (on/off) ratio. We propose that choosing a metal layer having appropriate ΔGf° is crucial in achieving reliable CBRAM devices.
Text
2021-BL Effect CBRAM_APLM_20220127_clear
- Accepted Manuscript
Text
5.0076903
- Version of Record
More information
Accepted/In Press date: 10 February 2022
e-pub ahead of print date: 3 March 2022
Published date: 3 March 2022
Additional Information:
Funding Information:
The authors acknowledge the support from the EPSRC program grant (Grant No. EP/R024642/1), the H2020-FETPROACT-2018-01 SYNCH project, and MSCA EC Grant Agreement No. 224 No. 101029535–MENESIS.
Publisher Copyright:
© 2022 Author(s).
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Local EPrints ID: 455226
URI: http://eprints.soton.ac.uk/id/eprint/455226
ISSN: 2166-532X
PURE UUID: 3faeba4a-0a25-4e0e-a707-e132ca9c6a60
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Date deposited: 15 Mar 2022 17:46
Last modified: 17 Mar 2024 03:59
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Contributors
Author:
Firman Simanjuntak
Author:
Ioulianna Panidi
Author:
Fayzah Talbi
Author:
Adam Kerrigan
Author:
Vlado K. Lazarov
Author:
Themistoklis Prodromakis
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