Items where Division is "Faculties (pre 2018 reorg) > Faculty of Physical Sciences and Engineering (pre 2018 reorg) > Electronics & Computer Science (pre 2018 reorg) > Nanoelectronics and Nanotechnology (pre 2018 reorg)
Current Faculties > Faculty of Engineering and Physical Sciences > School of Electronics and Computer Science > Electronics & Computer Science (pre 2018 reorg) > Nanoelectronics and Nanotechnology (pre 2018 reorg)
School of Electronics and Computer Science > Electronics & Computer Science (pre 2018 reorg) > Nanoelectronics and Nanotechnology (pre 2018 reorg)" and Year is 1987
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Number of items: 18.
Implantation dominated unction depths of low temperature and electron beam annealed As source/drain Regions - G A J Amaratunga, N D Knee, M J Hart and A G R Evans
Type: Other
| 1987
| Item not available on this server.
Comparison of silicon bipolar and GaAs/GaAlAs heterojunction bipolar technologies for high-speed ECL circuits - P Ashburn, A A Rezazadeh, E F Chor and A Brunnschweiler
Type: Other
| 1987
| Item not available on this server.
Comparison of experimental and computed results on arsenic and phosphorus doped polysilicon emitter bipolar transistors - P Ashburn, D J Roulston and C R Selvakumar
Type: Other
| 1987
| Item not available on this server.
Type: Article
| 1987
| Item not available on this server.
Type: Other
| 1987
| Item not available on this server.
Type: Other
| 1987
| Item not available on this server.
A quartz crystal oscillator with current controlled frequency trimming - A M Hall and W Redman-White
Type: Article
| 1987
| Item not available on this server.
Diffusion, clustering and defect assessment of CMOS source drain regions after e-beam annealing - M J Hart, A G R Evans, J L Altrip and G A J Amaratunga
Type: Other
| 1987
| Item not available on this server.
A study of diffusion, clustering and defects in As+ and BF2+ implanted silicon during scanning electron beam annealing - M J Hart, A G R Evans, G A J Amaratunga and J L Altrip
Type: Other
| 1987
| Item not available on this server.
Diffusion measurements and modelling of arsenic in silicon after scanning electron beam annealing - M J Hart, A G R Evans, G A J Amaratunga, J L Altrip and M Kijek
Type: Other
| 1987
| Item not available on this server.
Type: Other
| 1987
| Item not available on this server.
Surface Potential Effect on Gate-Drain Avalanche Breakdown in GaAs MESFET's - Hiroshi Mizuta, K. Yamaguchi and S. Takahashi
Type: Article
| 1987
Experiments on the active control of flexural wave power flow - W Redman-White, P A Nelson and A R D Curtia
Type: Article
| 1987
| Item not available on this server.
Anisotropic upper critical fields of orthorhombic single phase YBa2Cu3O7-d studied using preferentially oriented pellets - K Takita, H Akinaga, H Katoh, T Uchino, T Ishigaki and H Asano
Type: Article
| 1987
| Item not available on this server.
Superconductivity transition in high-Tc Y-Ba-Cu-O mixed-phase system - K Takita, T Ipposhi, T Uchino, T Gochou and K Masuda
Type: Article
| 1987
| Item not available on this server.
Magnetophonon resonance recombination with emission of two TA-phonons and impurity state in LPE- Hg1-xMnxTe - K Takita, T Uchino, T Gochou and K Masuda
Type: Article
| 1987
| Item not available on this server.
An investigation of the thermal stability of the interfacial oxide in polysilicon emitter bipolar transistors using high resolution TEM - G Wolstenholme, N Jorgensen, P Ashburn and G R Booker
Type: Other
| 1987
| Item not available on this server.
GaAs MESFET's fabricated by new self-alignment technology - E. Yanokura, Hiroshi Mizuta, M. Mori and S. Takahashi
Type: Conference or Workshop Item
| 1987
| Item not available on this server.